Structural analysis of stacking fault complex origin in 4H-SiC epitaxial wafer

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-06 DOI:10.1016/j.jcrysgro.2024.127880

Shohei Hayashi , Hideki Sako , Junji Senzaki

引用次数: 0

Abstract

The origin of expanded stacking fault complex (SFC) was investigated by high spatial resolution observation using transmission electron microscopy (TEM) in detail. From TEM observations and their analysis of the origin of expanded SFC, the physical mechanism of expansion from threading screw dislocation (TSD) in the substrate to SFC in the epitaxial layer was clarified. The TSD converted into four Frank partial dislocations (PDs) near the interface between epitaxial layer and substrate, and three PDs merged and formed prismatic stacking faults and the edge of basal-plane staking faults. In addition, scanning TEM (STEM) analysis revealed to the stacking sequence of SFs and the structures of PDs.

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4H-SiC 外延片中堆叠断层复合源的结构分析

通过使用透射电子显微镜（TEM）进行高空间分辨率观测，详细研究了扩展堆叠断层复合体（SFC）的起源。通过透射电子显微镜观察及其对扩展堆叠断层复合体起源的分析，阐明了从衬底中的螺纹螺旋位错（TSD）扩展到外延层中的堆叠断层复合体的物理机制。TSD 在外延层与衬底的界面附近转化为四个弗兰克偏位错 (PD)，三个 PD 合并后形成棱柱形堆积断层和基底面堆积断层的边缘。此外，扫描 TEM（STEM）分析还揭示了 SFs 的堆积顺序和 PDs 的结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.