Study on Static Deflection Model of MEMS Capacitive Microwave Power Sensors

IF 1.6 4区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Ye Jin;Debo Wang
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Abstract

In this paper, a static deflection model of MEMS cantilever beam is proposed, which can better study the force deformation of micro-electro-mechanical system (MEMS) cantilever beam and the output characteristics of capacitive microwave power sensor. The deflection curve is used to describe the deformation of the cantilever beam and then the overload power and sensitivity of this power sensor are derived. It is found that the overload power decreases with the beam length, and increases with the initial height of beam. The sensitivity increases with the beam length, and has a linear growth relationship with the measuring electrode width. A MEMS dual-channel microwave power sensor is designed, fabricated and measured. At a microwave signal frequency of 10 GHz, the sensitivity of the sensor is measured to be 0.11 V/W for the thermoelectric detection channel and 65.17 fF/W for the capacitive detection channel. The sensitivity calculated by the lumped model is 92.93 fF/W, that by the pivot model is 50.88 fF/W, and that by the deflection model proposed in this work is 75.21 fF/W. Therefore, the theoretical result of the static deflection model is more consistent with the measured result and has better accuracy than the traditional lumped model and pivot model.
微机电系统电容式微波功率传感器静态变形模型研究
本文提出了微机电系统(MEMS)悬臂梁的静态变形模型,可以更好地研究微机电系统(MEMS)悬臂梁的受力变形和电容式微波功率传感器的输出特性。利用挠度曲线来描述悬臂梁的变形,然后得出该功率传感器的过载功率和灵敏度。研究发现,过载功率随悬臂梁长度的增加而减小,随悬臂梁初始高度的增加而增大。灵敏度随横梁长度的增加而增加,并与测量电极宽度呈线性增长关系。设计、制造和测量了一种 MEMS 双通道微波功率传感器。在微波信号频率为 10 GHz 时,传感器热电检测通道的灵敏度为 0.11 V/W,电容检测通道的灵敏度为 65.17 fF/W。根据块状模型计算得出的灵敏度为 92.93 fF/W,根据枢轴模型计算得出的灵敏度为 50.88 fF/W,而根据本文提出的偏转模型计算得出的灵敏度为 75.21 fF/W。因此,与传统的块状模型和枢轴模型相比,静态挠度模型的理论结果与实测结果更加一致,精度更高。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Chinese Journal of Electronics
Chinese Journal of Electronics 工程技术-工程:电子与电气
CiteScore
3.70
自引率
16.70%
发文量
342
审稿时长
12.0 months
期刊介绍: CJE focuses on the emerging fields of electronics, publishing innovative and transformative research papers. Most of the papers published in CJE are from universities and research institutes, presenting their innovative research results. Both theoretical and practical contributions are encouraged, and original research papers reporting novel solutions to the hot topics in electronics are strongly recommended.
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