Asymmetric bi-level dual-core mode converter for high-efficiency and polarization-insensitive O-band fiber-chip edge coupling: breaking the critical size limitation

IF 6.5 2区 物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Xiaolin Yi, Dongyue Sun, Weike Zhao, Hanwen Li, Long Zhang, Yaocheng Shi, Daoxin Dai
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Abstract

Efficient coupling between optical fibers and on-chip photonic waveguides has long been a crucial issue for photonic chips used in various applications. Edge couplers (ECs) based on an inverse taper have seen widespread utilization due to their intrinsic broadband operation. However, it still remains a big challenge to realize polarization-insensitive low-loss ECs working at the O-band (1,260–1,360 nm), mainly due to the strong polarization dependence of the mode coupling/conversion and the difficulty to fabricate the taper tip with an ultra-small feature size. In this paper, a high-efficiency and polarization-insensitive O-band EC is proposed and demonstrated with great advantages that is fully compatible with the current 130-nm-node fabrication processes. By introducing an asymmetric bi-level dual-core mode converter, the fundamental mode confined in the thick core is evanescently coupled to that in the thin core, which has an expanded mode size matched well with the fiber and works well for both TE/TM-polarizations. Particularly, no bi-level junction in the propagation direction is introduced between the thick and thin waveguide sections, thereby breaking the critical limitation of ultra-small feature sizes. The calculated coupling loss is 0.44–0.56/0.48–0.61 dB across the O-band, while achieving 1-dB bandwidths exceeding 340/230 nm for the TE/TM-polarization modes. For the fabricated ECs, the peak coupling loss is ∼0.82 dB with a polarization dependent loss of ∼0.31 dB at the O-band when coupled to a fiber with a mode field diameter of 4 μm. It is expected that this coupling scheme promisingly provides a general solution even for other material platforms, e.g., lithium niobate, silicon nitride and so on.
用于高效率和偏振不敏感 O 波段光纤芯片边缘耦合的不对称双电平双核模式转换器:打破临界尺寸限制
光纤与片上光子波导之间的高效耦合一直是各种应用中光子芯片的关键问题。基于反锥形的边缘耦合器(EC)因其固有的宽带工作特性而得到广泛应用。然而,在 O 波段(1,260-1,360 nm)实现对偏振不敏感的低损耗边缘耦合器仍然是一个巨大的挑战,这主要是由于模式耦合/转换具有很强的偏振依赖性,而且很难制造出具有超小特征尺寸的锥形尖端。本文提出并演示了一种高效且对偏振不敏感的 O 波段电子镇流器,它具有与当前 130 纳米节点制造工艺完全兼容的巨大优势。通过引入非对称双电平双核模式转换器,限制在厚纤芯中的基模被逐渐耦合到薄纤芯中的基模,从而扩大了与光纤相匹配的模式尺寸,并在 TE/TM 两种偏振情况下都能正常工作。特别是,厚波导和薄波导之间在传播方向上没有引入双电平结,从而打破了超小特征尺寸的关键限制。计算得出的 O 波段耦合损耗为 0.44-0.56/0.48-0.61 dB,而 TE/TM 偏振模式的 1-dB 带宽超过 340/230 nm。对于所制造的 EC,当与模式场直径为 4 μm 的光纤耦合时,O 波段的峰值耦合损耗为 ∼0.82 dB,偏振相关损耗为 ∼0.31 dB。这种耦合方案有望为其他材料平台(如铌酸锂、氮化硅等)提供通用解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Nanophotonics
Nanophotonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
13.50
自引率
6.70%
发文量
358
审稿时长
7 weeks
期刊介绍: Nanophotonics, published in collaboration with Sciencewise, is a prestigious journal that showcases recent international research results, notable advancements in the field, and innovative applications. It is regarded as one of the leading publications in the realm of nanophotonics and encompasses a range of article types including research articles, selectively invited reviews, letters, and perspectives. The journal specifically delves into the study of photon interaction with nano-structures, such as carbon nano-tubes, nano metal particles, nano crystals, semiconductor nano dots, photonic crystals, tissue, and DNA. It offers comprehensive coverage of the most up-to-date discoveries, making it an essential resource for physicists, engineers, and material scientists.
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