Optical transmittance range of High-Temperature stable phase germanium dichalcogenide (GeS2) single crystal grown by the Bridgman method

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2024-09-02 DOI:10.1016/j.jcrysgro.2024.127878

Masaru Nakamura, Yoshitaka Matsushita

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引用次数: 0

Abstract

A high-temperature (HT) stable phase germanium dichalcogenide (GeS₂) was grown in an evacuated quartz ampoule to investigate its transparency range. First, as a starting material for the crystal growth of HT-GeS₂, GeS₂ glass containing HT-GeS₂ crystals was synthesized using our previously improved process for synthesizing polycrystalline sulfide compounds in a conventional horizontal furnace. The HT-GeS₂ crystal was grown using the Bridgman method under a temperature gradient of 20–30 °C/cm. The grown HT-GeS₂ single crystal was easily cleaved along the growth direction, and this cleaved surface was identified as the (001) face using X-ray diffraction (XRD). Single-crystal XRD analysis confirmed the growth of an HT-GeS₂ single crystal with a monoclinic structure (space group P2₁/c) and lattice parameters of a = 6.7061(4) Å, b = 16.0877(13) Å, and c = 11.4242(11) Å, and β = 91.069 (8)°. The optical transmittance spectra of the HT-GeS₂ single crystal were measured in the visible and infrared (IR) regions, revealing a transparency range of 0.36–22.5 μm. Differential thermal analysis revealed the melting point of HT-GeS₂ as 841 ± 1 °C. The HT-GeS₂ single crystal is expected to be a new candidate for IR optical crystal.

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布里奇曼法生长的高温稳定相二卤化锗（GeS2）单晶的光学透过率范围

在抽真空石英安瓿瓶中生长了一种高温（HT）稳定相二卤化锗（GeS2），以研究其透明度范围。首先，作为 HT-GeS2 晶体生长的起始材料，使用我们之前改进的在传统水平炉中合成多晶硫化物的工艺合成了含有 HT-GeS2 晶体的 GeS2 玻璃。HT-GeS2 晶体采用布里奇曼法在 20-30 °C/cm 的温度梯度下生长。生长出的 HT-GeS2 单晶很容易沿生长方向裂开，利用 X 射线衍射 (XRD) 将裂开的表面确定为 (001) 面。单晶 XRD 分析证实，生长出的 HT-GeS2 单晶具有单斜结构（空间群 P21/c），晶格参数为 a = 6.7061(4) Å、b = 16.0877(13) Å 和 c = 11.4242(11) Å，β = 91.069 (8)°。在可见光和红外（IR）区域测量了 HT-GeS2 单晶的光学透射光谱，发现其透明度范围为 0.36-22.5 μm。差热分析显示 HT-GeS2 的熔点为 841 ± 1 ℃。HT-GeS2 单晶有望成为新的候选红外光学晶体。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.