DC and RF analysis of ScAlN/GaN/β-Ga2O3 and ScAlN/InGaN/GaN/β-Ga2O3 HEMTs on SiC substrate

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-08-31 DOI:10.1016/j.mejo.2024.106394

M Jagadesh , A Karthikeyan , Devaraj Somasundaram

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Abstract

Scandium aluminum nitride (Sc_xAl_1-xN) is a promising material among group III nitrides, offering outstanding polarization properties resulting in very large carrier densities. We report the comparative analysis of Sc_0.18Al_0.72N/GaN/β-Ga₂O₃ and Sc_0.18Al_0.72N/InGaN/GaN/β-Ga₂O₃ HEMTs on Silicon carbide substrate. L_G = 55 nm, Sc_0.18Al_0.72N/GaN/β-Ga₂O₃ HEMT demonstrated maximum current density (I_DS) of 4.38 A/mm, very large carrier density (n_s) of 2.34 × 10¹³ cm⁻², large breakdown voltage (74 V) with low on-resistance (R_on ∼ 0.2 Ω mm), and cut-off frequency (f_T)/maximum oscillation frequency (f_max) of 220/242 GHz. Introduction of a very thin 5 nm In_0.1Ga_0.9N layer in the channel, further improves the 2DEG (two-dimensional electron density), drain current, breakdown voltage. Furthermore, Sc_0.18Al_0.72N/InGaN/GaN/β-Ga₂O₃ heterostructure shows stable transconductance (g_m) over wide gate bias. A gate voltage swing (GVS) of 7.72, I_DS of 6.08 A/mm, and V_BR of 105 V with R_on ∼ 0.138 recorded. These findings show the merits of scandium aluminium nitride barrier material, which enables the HEMTs for next generation radar and telecommunications.

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SiC衬底上ScAlN/GaN/β-Ga2O3和ScAlN/InGaN/GaN/β-Ga2O3 HEMT的直流和射频分析

氮化钪铝（ScxAl1-xN）是第 III 族氮化物中一种很有前途的材料，具有出色的极化特性，能产生非常大的载流子密度。我们报告了碳化硅衬底上 Sc0.18Al0.72N/GaN/β-Ga2O3 和 Sc0.18Al0.72N/InGaN/GaN/β-Ga2O3 HEMT 的比较分析。LG = 55 nm、Sc0.18Al0.72N/GaN/β-Ga2O3 HEMT 的最大电流密度 (IDS) 为 4.38 A/mm、超大载流子密度 (ns) 为 2.34 × 1013 cm-2、击穿电压 (74 V) 高且导通电阻低 (Ron ∼ 0.2 Ω mm)，截止频率 (fT) / 最大振荡频率 (fmax) 为 220/242 GHz。在沟道中引入极薄的 5 nm In0.1Ga0.9N 层，进一步提高了 2DEG（二维电子密度）、漏极电流和击穿电压。此外，Sc0.18Al0.72N/InGaN/GaN/β-Ga2O3 异质结构在宽栅极偏压下显示出稳定的跨导（gm）。栅极电压摆幅 (GVS) 为 7.72，IDS 为 6.08 A/mm，VBR 为 105 V，Ron ∼ 0.138。这些研究结果表明了氮化钪铝阻挡层材料的优点，使 HEMT 能够用于下一代雷达和电信。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.