Structural and electrical properties of grafted Si/GaAsSb heterojunction

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2024-09-06 DOI:10.1063/5.0225069

Haris Naeem Abbasi, Seunghyun Lee, Hyemin Jung, Nathan Gajowski, Yi Lu, Yifan Wang, Donghyeok Kim, Jie Zhou, Jiarui Gong, Chris Chae, Jinwoo Hwang, Manisha Muduli, Subramanya Nookala, Zhenqiang Ma, Sanjay Krishna

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Abstract

The short-wave infrared (SWIR) wavelength, especially 1.55 μm, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a receiver in these systems due to their internal gain, which enhances the system performance. Silicon-based APDs are promising since they are CMOS compatible, but they are limited in detecting 1.55 μm light detection. This study proposes a p-type Si on n-type GaAs0.51Sb0.49 (GaAsSb) lattice matched to InP substrates heterojunction formed using a grafting technique for future GaAsSb/Si APD technology. A p+Si nanomembrane is transferred onto the GaAsSb/AlInAs/InP substrate, with an ultrathin ALD-Al2O3 oxide at the interface, which behaves as both double-side passivation and quantum tunneling layers. The devices exhibit excellent surface morphology and interface quality, confirmed by atomic force microscope and transmission electron microscope. Also, the current–voltage (I–V) of the p+Si/n−GaAsSb heterojunction shows the rectifying characteristics with an ideality factor of 1.8. The I–V tests across multiple devices confirm high consistency and yield. Furthermore, the x-ray photoelectron spectroscopy measurement reveals that GaAsSb and Si are found to have type-II band alignment with a conduction band offset of 50 meV, which is favorable for the high-bandwidth APD application. The demonstration of the GaAsSb/Si heterojunction highlights the potential to advance current SWIR PD technologies.

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接枝硅/砷化镓锑异质结的结构和电气特性

短波红外（SWIR）波长，尤其是 1.55 μm 波长，在高速光通信和激光雷达系统等多个领域引起了极大关注。雪崩光电二极管（APD）因其内部增益而成为这些系统中接收器的关键部件，从而提高了系统性能。硅基 APD 具有良好的前景，因为它们与 CMOS 兼容，但在探测 1.55 μm 的光探测方面受到限制。本研究提出了一种 p 型硅与 n 型砷化镓 0.51Sb0.49 (GaAsSb) 晶格匹配的异质结，该异质结采用嫁接技术与 InP 衬底相匹配，适用于未来的 GaAsSb/Si APD 技术。将 p+Si 纳米膜转移到 GaAsSb/AlInAs/InP 衬底上，在界面上形成超薄的 ALD-Al2O3 氧化物，它既是双面钝化层，又是量子隧道层。原子力显微镜和透射电子显微镜证实，该器件具有极佳的表面形貌和界面质量。此外，p+Si/n-GaAsSb 异质结的电流-电压（I-V）显示出整流特性，表观因子为 1.8。对多个器件进行的 I-V 测试证实了高一致性和高产量。此外，X 射线光电子能谱测量显示，GaAsSb 和硅具有 II 型带对齐，导带偏移为 50 meV，这有利于高带宽 APD 的应用。砷化镓锑/硅异质结的演示凸显了推动当前 SWIR PD 技术发展的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.

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