{"title":"A Broadband Low Conversion Loss Single-Ended Resistive Mixer With an Innovative Topology","authors":"Tingwei Gong;Zhiqun Cheng;Chao Le;Xuefei Xuan;Bangjie Zheng;Zhiwei Zhang;Minshi Jia","doi":"10.1109/LMWT.2024.3376714","DOIUrl":null,"url":null,"abstract":"To achieve better broadband performance and lower conversion loss (CL), a mixer using an innovative mixing unit is proposed in this letter, which contains two gallium arsenide (GaAs) pseudomorphic high electron mobility transistors (pHEMTs) and a coupled capacitor. Leveraging the analysis and the equivalent circuit of the proposed topology, the minimum local oscillator (LO) power (\n<inline-formula> <tex-math>$P_{\\mathrm {LO},\\min }$ </tex-math></inline-formula>\n) and CL of the mixer are deduced and calculated. The analysis concluded that the ratio of the maximum time-varying impedance to the minimum time-varying impedance of the mixing unit maintains a substantial value across a wide frequency band, indicating enhanced broadband characteristics and reduced CL. In addition, based on the proposed topology and analysis, a single-ended mixer with a radio frequency (RF) range of 2–22 GHz and an intermediate frequency (IF) fixed at 100 MHz was implemented using the Sanan 0.15-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\n m GaAs pHEMT process. With a 15-dBm LO power, the test results of this mixer reveal a 10-dB CL and 20-dB isolation within the operating frequency range of 2–22 GHz. The designed single-ended mixer monolithic microwave integrated circuit (MMIC) achieves a fractional bandwidth (FBW) of 166% and occupies a chip area of \n<inline-formula> <tex-math>$0.7\\times 1$ </tex-math></inline-formula>\n mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 9","pages":"1103-1106"},"PeriodicalIF":0.0000,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10596124/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
To achieve better broadband performance and lower conversion loss (CL), a mixer using an innovative mixing unit is proposed in this letter, which contains two gallium arsenide (GaAs) pseudomorphic high electron mobility transistors (pHEMTs) and a coupled capacitor. Leveraging the analysis and the equivalent circuit of the proposed topology, the minimum local oscillator (LO) power (
$P_{\mathrm {LO},\min }$
) and CL of the mixer are deduced and calculated. The analysis concluded that the ratio of the maximum time-varying impedance to the minimum time-varying impedance of the mixing unit maintains a substantial value across a wide frequency band, indicating enhanced broadband characteristics and reduced CL. In addition, based on the proposed topology and analysis, a single-ended mixer with a radio frequency (RF) range of 2–22 GHz and an intermediate frequency (IF) fixed at 100 MHz was implemented using the Sanan 0.15-
$\mu $
m GaAs pHEMT process. With a 15-dBm LO power, the test results of this mixer reveal a 10-dB CL and 20-dB isolation within the operating frequency range of 2–22 GHz. The designed single-ended mixer monolithic microwave integrated circuit (MMIC) achieves a fractional bandwidth (FBW) of 166% and occupies a chip area of
$0.7\times 1$
mm2.