Investigation and Modeling of Scalability in ISV and OSV GaN HEMTs

Abstract

Internal source via (ISV) and outside source via (OSV) are two common structures of GaN HEMTs. This letter investigates and models the scalability differences in ISV and OSV gallium nitride high electron mobility transistors (GaN HEMTs). This letter provides detailed model parameters for ISV and OSV devices. Based on the extractions, the different scalability rules for ISV and OSV devices are analyzed and modeled. Finally, this letter applies the proposed scaling rules to the Angelov model, showing that the scaled models have excellent accuracy in terms of S-parameter and large-signal behaviors.