A 28-47.5 GHz broadband power amplifier using improved MCR technique in 40-nm CMOS

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-08-30 DOI:10.1016/j.mejo.2024.106395

Shize Duan , Zhenrong Li , Yanhui Wu , Xing Quan

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引用次数: 0

Abstract

This paper presents a broadband power amplifier (PA) implemented in 40-nm CMOS process for low power application. The PA cascades two stages of common-source differential transistors and adopts symmetrical magnetically coupled resonators (MCRs) for impedance matching and single-ended differential conversion. Theoretical analysis elucidates the effect of the resonator Q on the frequency response of the transformer, thus giving the distribution of the poles and their precise locations, and revealing the quantitative relationship between bandwidth and gain ripple. A method for efficiently balancing gain ripple and bandwidth in k, Q space under low-power conditions when the intrinsic Q of the source impedance is high is described in detail. Measurement results demonstrate a 51.6% 3-dB bandwidth from 28 to 47.5 GHz. The PA achieve 10.7 dBm P $_{sat}$ , 8.5 dBm OP $_{1db}$ and 23% peak PAE at 31 GHz.

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采用改进型 MCR 技术的 40 纳米 CMOS 28-47.5 GHz 宽带功率放大器

本文介绍了一种采用 40 纳米 CMOS 工艺实现的宽带功率放大器（PA），适用于低功耗应用。该功率放大器级联了两级共源差分晶体管，并采用对称磁耦合谐振器（MCR）进行阻抗匹配和单端差分转换。理论分析阐明了谐振器 Q 对变压器频率响应的影响，从而给出了极点分布及其精确位置，并揭示了带宽与增益纹波之间的定量关系。详细介绍了在低功率条件下，当源阻抗的本征 Q 值较高时，在 k、Q 空间内有效平衡增益纹波和带宽的方法。测量结果表明，28 至 47.5 GHz 的 3 dB 带宽为 51.6%。功率放大器在 31 GHz 时的 Psat 为 10.7 dBm，OP1db 为 8.5 dBm，峰值 PAE 为 23%。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.