{"title":"How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field","authors":"Markus Pristovsek, Nan Hu","doi":"10.1002/lpor.202400529","DOIUrl":null,"url":null,"abstract":"The theoretical expectation of semi‐polar light emitting diodes (LEDs) is reviewed and compared it to the experimental data. The reported peak internal quantum efficiency (IQE) of non‐polar, and semi‐polar InGaN LEDs are always much lower than the standard polar (0001) oriented LEDs. Calculating the band structure and states including the n‐ and p‐doped layer of LEDs in many orientations, It is found that the inverted polarization‐induced fields for most common semi‐polar orientations like (112) or (201) causes the hole ground state to leak out of the quantum well (QW) into the p‐doped GaN above and by this a low wavefunction overlap and a strongly increased probability for non‐radiative recombination with point defect outside the QW. Based on the calculations, (111), (102), or (103) are predicted as best candidates for LEDs with higher IQE at higher current densities than (0001). LEDs in the uncommon semi‐polar (103) orientation on sapphire have been realized. The (103) LEDs showed the same IQE as (0001) LEDs but at a much higher current density due to the higher overlap of electron and hole wave functions, which is especially useful for micro‐LEDs.","PeriodicalId":204,"journal":{"name":"Laser & Photonics Reviews","volume":null,"pages":null},"PeriodicalIF":9.8000,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Laser & Photonics Reviews","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/lpor.202400529","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
The theoretical expectation of semi‐polar light emitting diodes (LEDs) is reviewed and compared it to the experimental data. The reported peak internal quantum efficiency (IQE) of non‐polar, and semi‐polar InGaN LEDs are always much lower than the standard polar (0001) oriented LEDs. Calculating the band structure and states including the n‐ and p‐doped layer of LEDs in many orientations, It is found that the inverted polarization‐induced fields for most common semi‐polar orientations like (112) or (201) causes the hole ground state to leak out of the quantum well (QW) into the p‐doped GaN above and by this a low wavefunction overlap and a strongly increased probability for non‐radiative recombination with point defect outside the QW. Based on the calculations, (111), (102), or (103) are predicted as best candidates for LEDs with higher IQE at higher current densities than (0001). LEDs in the uncommon semi‐polar (103) orientation on sapphire have been realized. The (103) LEDs showed the same IQE as (0001) LEDs but at a much higher current density due to the higher overlap of electron and hole wave functions, which is especially useful for micro‐LEDs.
期刊介绍:
Laser & Photonics Reviews is a reputable journal that publishes high-quality Reviews, original Research Articles, and Perspectives in the field of photonics and optics. It covers both theoretical and experimental aspects, including recent groundbreaking research, specific advancements, and innovative applications.
As evidence of its impact and recognition, Laser & Photonics Reviews boasts a remarkable 2022 Impact Factor of 11.0, according to the Journal Citation Reports from Clarivate Analytics (2023). Moreover, it holds impressive rankings in the InCites Journal Citation Reports: in 2021, it was ranked 6th out of 101 in the field of Optics, 15th out of 161 in Applied Physics, and 12th out of 69 in Condensed Matter Physics.
The journal uses the ISSN numbers 1863-8880 for print and 1863-8899 for online publications.