An Erbium-Doped Waveguide Amplifier on Thin Film Lithium Niobate with an Output Power Exceeding 100 mW

Abstract

A high-power thin film lithium niobate (TFLN) erbium-doped waveguide amplifier (EDWA) is demonstrated with a maximum on-chip output power of 113 mW and a gain of 16 dB. The on-chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1 × 1 cm². Segmented LMA waveguides are connected with waveguide tapers to achieve on-chip mode conversion, which maintains single-mode propagation all over the EDWA even at the waveguide bends. The design leads to a significant increase in the amplified signal power by orders of magnitude and will open an avenue for applications such as on-chip high-power lasers and amplifier systems.