Study of the n− region formation process in n-on-p HgCdTe devices

IF 3.1 3区 物理与天体物理 Q2 INSTRUMENTS & INSTRUMENTATION
Deming Kong , Yu Zhao , Yuan Dong , Yang Qiu , Shaonan Zheng , Qize Zhong , Quanzhi Sun , Liqi Zhu , Zhikai Gan , Xingyan Zhao , Ting Hu
{"title":"Study of the n− region formation process in n-on-p HgCdTe devices","authors":"Deming Kong ,&nbsp;Yu Zhao ,&nbsp;Yuan Dong ,&nbsp;Yang Qiu ,&nbsp;Shaonan Zheng ,&nbsp;Qize Zhong ,&nbsp;Quanzhi Sun ,&nbsp;Liqi Zhu ,&nbsp;Zhikai Gan ,&nbsp;Xingyan Zhao ,&nbsp;Ting Hu","doi":"10.1016/j.infrared.2024.105544","DOIUrl":null,"url":null,"abstract":"<div><p>The n<sup>−</sup> region is crucial to the performance of n-on-p HgCdTe devices. However, the underlying mechanisms governing its formation process remain insufficiently elucidated in current literature. In this work, the influence of annealing temperature on the n<sup>−</sup> region formation process was investigated systematically through experiments and one-dimensional (1D) simulation. The two key parameters, the transport rate of interstitials (<em>Tr<sub>I</sub></em>) and the diffusion coefficient of vacancies (<em>D<sub>V</sub></em>) were determined through the 1D model, and their accuracy was validated by experiments. The determination of <em>Tr<sub>I</sub></em> and <em>D<sub>V</sub></em> allows for more flexible and precise optimization of the n<sup>−</sup> region in HgCdTe, thereby providing valuable guidance for cost-effective, high performance, and reliable preparation of HgCdTe detectors.</p></div>","PeriodicalId":13549,"journal":{"name":"Infrared Physics & Technology","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Infrared Physics & Technology","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1350449524004286","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"INSTRUMENTS & INSTRUMENTATION","Score":null,"Total":0}
引用次数: 0

Abstract

The n region is crucial to the performance of n-on-p HgCdTe devices. However, the underlying mechanisms governing its formation process remain insufficiently elucidated in current literature. In this work, the influence of annealing temperature on the n region formation process was investigated systematically through experiments and one-dimensional (1D) simulation. The two key parameters, the transport rate of interstitials (TrI) and the diffusion coefficient of vacancies (DV) were determined through the 1D model, and their accuracy was validated by experiments. The determination of TrI and DV allows for more flexible and precise optimization of the n region in HgCdTe, thereby providing valuable guidance for cost-effective, high performance, and reliable preparation of HgCdTe detectors.

n 对 p 碲化镉汞器件中 n 区形成过程的研究
n 区对 n 对 p 碲化镉汞器件的性能至关重要。然而,目前的文献对其形成过程的内在机制仍未充分阐明。本研究通过实验和一维(1D)模拟系统地研究了退火温度对 n 区形成过程的影响。通过一维模型确定了两个关键参数,即间隙的传输速率(TrI)和空位的扩散系数(DV),并通过实验验证了它们的准确性。通过确定 TrI 和 DV,可以更灵活、更精确地优化碲化镉汞的 n 区,从而为经济、高性能、可靠地制备碲化镉汞探测器提供有价值的指导。
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来源期刊
CiteScore
5.70
自引率
12.10%
发文量
400
审稿时长
67 days
期刊介绍: The Journal covers the entire field of infrared physics and technology: theory, experiment, application, devices and instrumentation. Infrared'' is defined as covering the near, mid and far infrared (terahertz) regions from 0.75um (750nm) to 1mm (300GHz.) Submissions in the 300GHz to 100GHz region may be accepted at the editors discretion if their content is relevant to shorter wavelengths. Submissions must be primarily concerned with and directly relevant to this spectral region. Its core topics can be summarized as the generation, propagation and detection, of infrared radiation; the associated optics, materials and devices; and its use in all fields of science, industry, engineering and medicine. Infrared techniques occur in many different fields, notably spectroscopy and interferometry; material characterization and processing; atmospheric physics, astronomy and space research. Scientific aspects include lasers, quantum optics, quantum electronics, image processing and semiconductor physics. Some important applications are medical diagnostics and treatment, industrial inspection and environmental monitoring.
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