Design of a 4H–SiC Schottky barrier FET biosensor with dual-source and dual-drain on suspended beam channel

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2024-08-26 DOI:10.1016/j.micrna.2024.207962

Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Xingyu Wei, Zhen Cao, Yintang Yang

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Abstract

In this paper, a Schottky barrier field effect transistor biosensor with dual-source, dual-drain, and a suspended beam channel (DSDD-SB-FET) is proposed and its biosensor performance is investigated by simulation. The simulation results show that compared with the conventional 6H–SiC Schottky barrier field effect transistor (6H-SiC-SB-FET) biosensor, the new structure proposed in this paper has superior sensitivity characteristics. The S_Ion is 1.83 × 10⁸, S_gm,max is 1.44 × 10⁸, S_Ion/Ioff is 1.53 × 10⁷, and S_SS is 83 % at K = 12, which are respectively 554 times, 476 times, 2.76 × 10⁴ times, and 61 % higher than those of the 6H-SiC-SB-FET. In addition, we also investigate the effects of non-ideal filling conditions and temperature variations on its performance in practical applications, and conclude that the DSDD-SB-FET biosensor has excellent sensing performance in practical applications as well.

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在悬梁通道上设计具有双源和双漏的 4H-SiC 肖特基势垒 FET 生物传感器

本文提出了一种具有双源、双漏和悬梁沟道的肖特基势垒场效应晶体管生物传感器（DSDD-SB-FET），并对其生物传感器性能进行了仿真研究。仿真结果表明，与传统的 6H-SiC 肖特基势垒场效应晶体管（6H-SiC-SB-FET）生物传感器相比，本文提出的新结构具有更优越的灵敏度特性。在 K = 12 时，SIon 为 1.83 × 108，Sgm,max 为 1.44 × 108，SIon/Ioff 为 1.53 × 107，SSS 为 83 %，分别是 6H-SiC-SB-FET 的 554 倍、476 倍、2.76 × 104 倍和 61 %。此外，我们还研究了非理想填充条件和温度变化对其实际应用性能的影响，并得出结论：DSDD-SB-FET 生物传感器在实际应用中也具有优异的传感性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

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