Breast Cancer Detection Using Si-Doped MoS2 Channel-Based Thickness Engineered TFET Biosensor

Abstract

This letter investigates the electrical performance characteristics for breast cancer cell line detection by developing the Si-doped molybdenum disulfide thickness engineered tunnel field effect transistor biosensor. A complete study of the electrostatic field is presented, including the surface potential, electric field, transconductance (g _m ), threshold voltage (V _th ), on current (I _ON ), and subthreshold swing. The sensitivity is analyzed in terms of drain current (I _ds ), g _m , V _th , I _ON , I _ON /I _OFF ratio, and g _m . Further, this study investigates the impact of device geometry variations, specifically cavity thickness, and length on the sensitivity of drain current ( $\text{S}_{\rm{I}_{\rm{ds}}}$ ), transconductance ( $\text{S}_{\rm{g}_{\rm{m}}}$ ), threshold voltage ( ${\text{S}}_{{{\rm{V}}_{{\rm{th}}}}}$ ), and on current ( ${\text{S}}_{{{\rm{I}}_{{\rm{ON}}}}}$ ). In addition, the impact of immobilized cell line occupancy on device performance has been examined. The presented biosensor is highly sensitive with increased cavity occupancy resulting in enhanced performance. As a result, array-based screening and diagnosis of breast cancer cells can be accomplished with the device, which is also economical and simpler to fabricate.