A 1 V supply 10.3 ppm/°C 59 nW subthreshold CMOS voltage reference

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Tiedong Cheng, Xinlv Gong
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引用次数: 0

Abstract

—A low temperature coefficient (TC), low power subthreshold CMOS voltage reference (CVR) over a wide temperature range is presented in this paper. The proposed circuit employs the voltage difference between the two inputs of the operational amplifier as the proportional to absolute temperature (PTAT) voltage and the complementary to absolute temperature (CTAT) voltage, which is obtained by the ΔVGS of different-threshold transistors biased in the subthreshold region. The proposed CVR was designed in the 0.18-μm CMOS process with a total area of 0.0049 mm2. It achieves an average temperature coefficient (TC) of 10.3 ppm/°C over a temperature range of −40 °C–120 °C, with a TC of 4.9 ppm/°C at the TT corner. The measured power supply rejection ratio (PSRR) is −65 dB at 10 Hz and −30 dB at 1 MHz, while the power consumption is 59 nW at a supply voltage of 1 V. The average line sensitivity (LS) is 0.16 %/V, and the LS is 0.09 %/V at the TT corner.

A 1 V 电源 10.3 ppm/°C 59 nW 亚阈值 CMOS 电压基准
-本文提出了一种在宽温度范围内具有低温度系数 (TC)、低功耗的亚阈值 CMOS 电压基准 (CVR)。该电路采用运算放大器两个输入端的电压差作为绝对温度比例电压 (PTAT) 和绝对温度互补电压 (CTAT),后者由偏置在亚阈值区的不同阈值晶体管的 ΔVGS 得出。拟议的 CVR 采用 0.18μm CMOS 工艺设计,总面积为 0.0049 mm2。它在 -40 °C-120 °C 的温度范围内实现了 10.3 ppm/°C 的平均温度系数 (TC),在 TT 角的 TC 为 4.9 ppm/°C。测得的电源抑制比 (PSRR) 在 10 Hz 时为 -65 dB,在 1 MHz 时为 -30 dB,电源电压为 1 V 时功耗为 59 nW。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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