Stacking-dependent Van Hove singularity shifts in three-dimensional charge density waves of kagome metals AV3Sb5 (A = K, Rb, Cs)

IF 2.4 4区 物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Chanchal K. Barman , Sun-Woo Kim , Youngkuk Kim
{"title":"Stacking-dependent Van Hove singularity shifts in three-dimensional charge density waves of kagome metals AV3Sb5 (A = K, Rb, Cs)","authors":"Chanchal K. Barman ,&nbsp;Sun-Woo Kim ,&nbsp;Youngkuk Kim","doi":"10.1016/j.cap.2024.08.009","DOIUrl":null,"url":null,"abstract":"<div><p>Vanadium-based kagomé systems <em>A</em>V<sub>3</sub>Sb<sub>5</sub> (<em>A</em> = K, Rb, Cs) have emerged as paradigmatic examples exhibiting unconventional charge density waves (CDWs) and superconductivity linked to van Hove singularities (VHSs). Despite extensive studies, the three-dimensional (3D) nature of CDW states in these systems remains elusive. This study employs first-principles density functional theory and a tight-binding model to investigate the stacking-dependent electronic structures of 3D CDWs in <em>A</em>V<sub>3</sub>Sb<sub>5</sub>, emphasizing the significant role of interlayer coupling in behaviors of the VHSs associated with diverse 3D CDW orders. We develop a minimal 3D tight-binding model and present a detailed analysis of band structures and density of states for various 3D CDW stacking configurations, including those with and without a <em>π</em>-phase shift stacking of the inverse star of David, as well as alternating stacking of the inverse star of David and the star of David. We find that VHSs exist below the Fermi level even in 3D CDWs without <em>π</em>-phase shift stackings, and that these VHSs shift downward in the <em>π</em>-phase shift stacking CDW structure, stabilizing the <span><math><mn>2</mn><mo>×</mo><mn>2</mn><mo>×</mo><mn>2</mn></math></span> <em>π</em>-shifted inverse star of David distortions in alternating vanadium layers as the ground state 3D CDW order of <em>A</em>V<sub>3</sub>Sb<sub>5</sub>. Our work provides the electronic origin of 3D CDW orders, paving the way for a deeper understanding of CDWs and superconductivity in <em>A</em>V<sub>3</sub>Sb<sub>5</sub> kagomé metals.</p></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"68 ","pages":"Pages 31-38"},"PeriodicalIF":2.4000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173924001846","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Vanadium-based kagomé systems AV3Sb5 (A = K, Rb, Cs) have emerged as paradigmatic examples exhibiting unconventional charge density waves (CDWs) and superconductivity linked to van Hove singularities (VHSs). Despite extensive studies, the three-dimensional (3D) nature of CDW states in these systems remains elusive. This study employs first-principles density functional theory and a tight-binding model to investigate the stacking-dependent electronic structures of 3D CDWs in AV3Sb5, emphasizing the significant role of interlayer coupling in behaviors of the VHSs associated with diverse 3D CDW orders. We develop a minimal 3D tight-binding model and present a detailed analysis of band structures and density of states for various 3D CDW stacking configurations, including those with and without a π-phase shift stacking of the inverse star of David, as well as alternating stacking of the inverse star of David and the star of David. We find that VHSs exist below the Fermi level even in 3D CDWs without π-phase shift stackings, and that these VHSs shift downward in the π-phase shift stacking CDW structure, stabilizing the 2×2×2 π-shifted inverse star of David distortions in alternating vanadium layers as the ground state 3D CDW order of AV3Sb5. Our work provides the electronic origin of 3D CDW orders, paving the way for a deeper understanding of CDWs and superconductivity in AV3Sb5 kagomé metals.

神目金属 AV3Sb5(A = K、Rb、Cs)三维电荷密度波中依赖堆叠的范霍夫奇异性移动
钒基卡戈梅系统 AV3Sb5(A = K、Rb、Cs)已成为展示非常规电荷密度波(CDW)和与范霍夫奇点(VHS)相关的超导性的典范。尽管进行了广泛的研究,但这些系统中 CDW 状态的三维(3D)性质仍然难以捉摸。本研究采用第一原理密度泛函理论和紧结合模型来研究 AV3Sb5 中三维 CDW 的堆叠依赖性电子结构,强调层间耦合在与不同三维 CDW 阶相关的 VHS 行为中的重要作用。我们建立了一个最小的三维紧密结合模型,并详细分析了各种三维 CDW 堆叠配置的带状结构和态密度,包括具有和不具有大卫逆星的π相移堆叠,以及大卫逆星和大卫星的交替堆叠。我们发现,即使在没有π相移堆叠的三维 CDW 中,VHS 也存在于费米级以下,而且这些 VHS 在π相移堆叠 CDW 结构中向下移动,从而稳定了交替钒层中的 2×2×2 π相移反戴维星畸变,这就是 AV3Sb5 的基态三维 CDW 秩。我们的工作提供了三维 CDW 秩的电子起源,为深入了解 AV3Sb5 卡戈麦金属中的 CDW 和超导性铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Current Applied Physics
Current Applied Physics 物理-材料科学:综合
CiteScore
4.80
自引率
0.00%
发文量
213
审稿时长
33 days
期刊介绍: Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications. Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques. Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals. Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review. The Journal is owned by the Korean Physical Society.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信