Gamma-Irradiation-Induced Electrical Characteristic Variations in MoS₂ Field-Effect Transistors with Buried Local Back-Gate Structure.

IF 4.4 3区材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY

Nanomaterials Pub Date : 2024-08-07 DOI:10.3390/nano14161324

Su Jin Kim, Seungkwon Hwang, Jung-Dae Kwon, Jongwon Yoon, Jeong Min Park, Yongsu Lee, Yonghun Kim, Chang Goo Kang

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Abstract

The impact of radiation on MoS₂-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS₂ field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al₂O₃ gate dielectrics and MoS₂/Al₂O₃ interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al₂O₃ dielectric interface near the MoS₂ side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS₂ channel/dielectric interface.

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具有埋入式局部后栅结构的 MoS2 场效应晶体管中伽马射线辐射诱发的电气特性变化。

辐射对基于 MoS2 的器件的影响是在辐射敏感环境中利用基于二维半导体技术的一个重要因素。在这项研究中，研究了伽马辐照对具有埋入式局部后栅结构的 MoS2 场效应晶体管电学变化的影响，还分析了伽马辐照对 Al2O3 栅极电介质和 MoS2/Al2O3 接口的相关影响。分析了辐照前后的传输和输出特性。在 3 kGy 的辐照下，电流水平下降了 15.7%。此外，与未经辐照的器件相比，在 1、2 和 3 kGy 的辐照条件下，阈值电压分别出现了 0.50、0.99 和 1.15 V 的正移。这种行为归因于空穴在靠近 MoS2 一侧的 Al2O3 介电界面积累以及在界面上形成电子捕获点的综合效应，这增加了 MoS2 沟道/介电界面上的电子隧道效应。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanomaterials NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

8.50

自引率

9.40%

发文量

3841

审稿时长

14.22 days

期刊介绍： Nanomaterials (ISSN 2076-4991) is an international and interdisciplinary scholarly open access journal. It publishes reviews, regular research papers, communications, and short notes that are relevant to any field of study that involves nanomaterials, with respect to their science and application. Thus, theoretical and experimental articles will be accepted, along with articles that deal with the synthesis and use of nanomaterials. Articles that synthesize information from multiple fields, and which place discoveries within a broader context, will be preferred. There is no restriction on the length of the papers. Our aim is to encourage scientists to publish their experimental and theoretical research in as much detail as possible. Full experimental or methodical details, or both, must be provided for research articles. Computed data or files regarding the full details of the experimental procedure, if unable to be published in a normal way, can be deposited as supplementary material. Nanomaterials is dedicated to a high scientific standard. All manuscripts undergo a rigorous reviewing process and decisions are based on the recommendations of independent reviewers.

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