Gel-Based PVA/SiO₂/p-Si Heterojunction for Electronic Device Applications.

IF 5 3区化学 Q1 POLYMER SCIENCE

Gels Pub Date : 2024-08-20 DOI:10.3390/gels10080537

Adel Ashery, Ahmed E H Gaballah, Gamal M Turky, Mohamed A Basyooni-Murat Kabatas

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Abstract

The current work presents a new structure based on Au/PVA/SiO₂/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO₂/Si using the spin-coating technique. The silicon wafer was left to be oxidized in a furnace at 1170 k for thirty minutes, creating an interdiffusion layer of SiO₂. The variations in the dielectric constant (Є'), dielectric loss (Є″), and dielectric tangent (tanδ) with the change in the frequency, voltage, and temperature were analyzed. The results showed an increase in the dielectric constant (Є') and a decrease in the dielectric loss (Є″) and tangent (tanδ); thus, the Au/PVA/SiO₂/p-Si/Al heterostructure has opened up new frontiers for the semiconductor industry, especially for capacitor manufacturing. The Cole-Cole diagrams of the Є″ and Є' have been investigated at different temperatures and voltages. The ideality factor (n), barrier height (Φ_b), series resistance (R_s), shunt resistance (R_sh), and rectification ratio (RR) were also measured at different temperatures.

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用于电子设备应用的凝胶基 PVA/SiO2/p-Si 异质结。

本研究提出了一种基于 Au/PVA/SiO2/p-Si/Al 的新结构，这种结构以前从未研究过。采用旋涂技术将聚乙烯醇（PVA）聚合物凝胶水溶液沉积在二氧化硅/硅表面。硅晶片在 1170 k 的熔炉中氧化 30 分钟，形成二氧化硅相互扩散层。分析了介电常数（Є'）、介电损耗（Є″）和介电正切（tanδ）随频率、电压和温度变化的变化情况。结果表明，介电常数（Є'）增大，介电损耗（Є″）和正切（tanδ）减小；因此，Au/PVA/SiO2/p-Si/Al 异质结构为半导体工业，尤其是电容器制造开辟了新的领域。我们研究了不同温度和电压下Є″和Є'的科尔-科尔图。此外，还测量了不同温度下的意向系数（n）、势垒高度（Φb）、串联电阻（Rs）、并联电阻（Rsh）和整流比（RR）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Gels POLYMER SCIENCE-

CiteScore

4.70

自引率

19.60%

发文量

707

审稿时长

11 weeks