Efficient doping of Spiro-OMeTAD by NO2

IF 4 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Synthetic Metals Pub Date : 2024-08-22 DOI:10.1016/j.synthmet.2024.117727

Haoyu Zheng, Yangxuan Liu, Hengyi Ma, Yani Wang, Kai Xu

{"title":"Efficient doping of Spiro-OMeTAD by NO2","authors":"Haoyu Zheng, Yangxuan Liu, Hengyi Ma, Yani Wang, Kai Xu","doi":"10.1016/j.synthmet.2024.117727","DOIUrl":null,"url":null,"abstract":"<div>Doping of 2,2′,7,7′-tetrakis(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene(Spiro-OMeTAD), which is the most common used hole transport material in perovskite solar cells, is widely studied. Especially, bis(trifluoromethane)sulfonamide (Li-TFSI) combined with 4-tert-butylpyridine (TBP) is the most studied dopant to improve the conductivity of Spiro-OMeTAD, with conductivity around 6×10−8 S/cm. In this study, we employed a new oxidizing agent NO2 to dop the Spiro-OMeTAD simply by vapor exposure, showing efficient doping with conductivity up to 2.53×10−3 S/cm and excellent film quality. The doping mechanism was further analyzed by ultraviolet-visible-near infrared spectroscopy (UV-Vis-NIR), electron paramagnetic resonance spectroscopy (EPR), Fourier infrared absorption spectroscopy (TFIR), and X-ray photoelectron spectroscopy. Our findings highlight the potential of molecular doping with NO2 to significantly improve the conductivity of Spiro-OMeTAD, providing a deep understanding of the doping effects on Spiro-OMeTAD.</div>","PeriodicalId":22245,"journal":{"name":"Synthetic Metals","volume":"308 ","pages":"Article 117727"},"PeriodicalIF":4.0000,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Synthetic Metals","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0379677924001899","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

Doping of 2,2′,7,7′-tetrakis(N,N-di-4-methoxyphenylamino)-9,9′-spirobifluorene(Spiro-OMeTAD), which is the most common used hole transport material in perovskite solar cells, is widely studied. Especially, bis(trifluoromethane)sulfonamide (Li-TFSI) combined with 4-tert-butylpyridine (TBP) is the most studied dopant to improve the conductivity of Spiro-OMeTAD, with conductivity around 6×10⁻⁸ S/cm. In this study, we employed a new oxidizing agent NO₂ to dop the Spiro-OMeTAD simply by vapor exposure, showing efficient doping with conductivity up to 2.53×10⁻³ S/cm and excellent film quality. The doping mechanism was further analyzed by ultraviolet-visible-near infrared spectroscopy (UV-Vis-NIR), electron paramagnetic resonance spectroscopy (EPR), Fourier infrared absorption spectroscopy (TFIR), and X-ray photoelectron spectroscopy. Our findings highlight the potential of molecular doping with NO₂ to significantly improve the conductivity of Spiro-OMeTAD, providing a deep understanding of the doping effects on Spiro-OMeTAD.

查看原文本刊更多论文

用二氧化氮高效掺杂螺-OMeTAD

2,2′,7,7′-四(N,N-二-4-甲氧基苯基氨基)-9,9′-螺二芴(Spiro-OMeTAD)是过氧化物太阳能电池中最常用的空穴传输材料，其掺杂问题被广泛研究。其中，双（三氟甲烷）磺酰胺（Li-TFSI）与 4-叔丁基吡啶（TBP）的结合是提高螺-OMeTAD 电导率研究最多的掺杂剂，其电导率约为 6×10-8 S/cm。在这项研究中，我们采用了一种新的氧化剂 NO2，通过蒸气暴露来掺杂斯派罗-OMeTAD，结果显示掺杂效率高，电导率可达 2.53×10-3 S/cm，且薄膜质量优异。我们还通过紫外-可见-近红外光谱（UV-Vis-NIR）、电子顺磁共振光谱（EPR）、傅立叶红外吸收光谱（TFIR）和 X 射线光电子能谱进一步分析了掺杂机理。我们的研究结果突显了分子掺杂 NO2 显著提高螺-OMeTAD 导电性的潜力，为深入了解螺-OMeTAD 的掺杂效应提供了依据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Synthetic Metals 工程技术-材料科学：综合

CiteScore

8.30

自引率

4.50%

发文量

189

审稿时长

33 days

期刊介绍： This journal is an international medium for the rapid publication of original research papers, short communications and subject reviews dealing with research on and applications of electronic polymers and electronic molecular materials including novel carbon architectures. These functional materials have the properties of metals, semiconductors or magnets and are distinguishable from elemental and alloy/binary metals, semiconductors and magnets.