The effect of grits interference on materials removal mechanism during scratching process of silicon carbide

IF 5.3 1区 工程技术 Q1 ENGINEERING, MECHANICAL
Wear Pub Date : 2024-08-10 DOI:10.1016/j.wear.2024.205527
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引用次数: 0

Abstract

Silicon carbide (SiC) as a difficult-to-process material is hard to achieve ductile grinding completely, and is likely to occur brittle breakage with low processing efficiency, leading to its low performance, therefore, it is necessary to study its removal mechanism to improve the processing quality. The removal mechanism of single grit cutting is well understood. In the real processing of SiC, there are multiple grits at different positions to remove the materials simultaneously, but the phenomenon of materials removal by multiple grits cannot be observed separately. In order to clarify the interference behavior of neighbored grits, current study conducted a neighbored scratch experiment under varied force in sequence. The experiment evidently revealed the deformation, pits, fracture morphology and removal modes under different interference conditions. Since in-situ monitor of materials removal is unable to be realized, a numerical model with different scratch intervals by coupling the smoothed particle hydrodynamics (SPH) and finite element method (FEM) was used to understand the material damage and stress distribution. Based on the observation from experimental and SPH-FEM results, a theoretical model of neighbored scratch stress field is established to explain the mechanism from plastic and fracture mechanics. From the model, the size of the plastic zone and the interval between the neighbored plastic zone are critical to control the interference mode. The interference mode affects the distribution of stress field and realizes the enhancement effect of material removal. Therefore, the materials removal model could be adopted to control the grinding efficiency and quality in industry.

碳化硅划痕过程中砂粒干涉对材料去除机理的影响
碳化硅(SiC)作为一种难加工材料,很难完全实现韧性磨削,容易发生脆性断裂,加工效率低,导致其性能低下,因此有必要对其去除机理进行研究,以提高加工质量。单砂粒切削的去除机理已为人们所熟知。在 SiC 的实际加工过程中,不同位置有多个磨粒同时去除材料,但无法分别观察多个磨粒去除材料的现象。为了弄清相邻磨粒的干涉行为,本研究依次进行了不同作用力下的相邻划痕实验。实验明显揭示了不同干涉条件下的变形、凹坑、断口形态和去除模式。由于无法实现材料去除的原位监测,因此采用平滑粒子流体力学(SPH)和有限元法(FEM)耦合建立了不同划痕间隔的数值模型,以了解材料的损伤和应力分布。根据实验和 SPH-FEM 的观察结果,建立了邻近划痕应力场的理论模型,从塑性力学和断裂力学的角度解释了其机理。根据该模型,塑性区的大小和相邻塑性区之间的间隔是控制干涉模式的关键。干涉模式影响应力场的分布,实现材料去除的增强效应。因此,该材料去除模型可用于控制工业中的研磨效率和质量。
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来源期刊
Wear
Wear 工程技术-材料科学:综合
CiteScore
8.80
自引率
8.00%
发文量
280
审稿时长
47 days
期刊介绍: Wear journal is dedicated to the advancement of basic and applied knowledge concerning the nature of wear of materials. Broadly, topics of interest range from development of fundamental understanding of the mechanisms of wear to innovative solutions to practical engineering problems. Authors of experimental studies are expected to comment on the repeatability of the data, and whenever possible, conduct multiple measurements under similar testing conditions. Further, Wear embraces the highest standards of professional ethics, and the detection of matching content, either in written or graphical form, from other publications by the current authors or by others, may result in rejection.
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