Tuning optical excitations of graphene quantum dots through selective nitrogen doping

Saurav Kumar, Neha Agnihotri
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Abstract

Our research has revealed that the nitrogen doping configuration has a significant impact on the absorption properties and band gap of nitrogen doped graphene quantum dots (NGQDs). By analyzing the composition and character of optical transitions, we have observed that nitrogen doping causes a redistribution of oscillator strength between significant peaks and the emergence of new optical features. These changes lead to broken molecular orbital degeneracies, optical peak splitting, and activation of dark states in the visible to near-infrared (NIR) region. These findings shed light on the mechanisms that govern alterations in the spectral properties of NGQDs within the visible and near-infra red (NIR) absorption bands. Furthermore, selective manipulation of optoelectronic properties via distinct N-doping patterns could pave the way for the development of novel optoelectronic nanodevices and functional materials.

通过选择性掺氮调谐石墨烯量子点的光学激发
我们的研究发现,氮掺杂构型对氮掺杂石墨烯量子点(NGQDs)的吸收特性和带隙有重大影响。通过分析光学跃迁的组成和特征,我们观察到氮掺杂会导致重要峰值之间振荡器强度的重新分配,并出现新的光学特征。这些变化导致分子轨道退行性被打破、光学峰分裂以及可见光到近红外(NIR)区域暗态的激活。这些发现揭示了 NGQDs 在可见光和近红外(NIR)吸收带内光谱特性变化的机制。此外,通过不同的 N 掺杂模式选择性地操纵光电特性可为开发新型光电纳米器件和功能材料铺平道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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