Multi-switch-controlled multi-mode TRFE with a high-linearity ATRSW for 2.4-GHz ISM applications

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Libo Zheng , Yan Jiang , Haowei Xie , Xiaohuan Li , Hualong Ji , Yi Liu , Yufeng Guo
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Abstract

This paper presents a multi-switch-controlled multi-mode transceiver front end (TRFE) designed for the 2.4-GHz industrial–scientific–medical (ISM) band, with a particular focus on enhancing the linearity of the transmit/receive switch (TRSW) on the antenna side. Considering the distinct power levels in the RX/TX paths, the TRSW is designed to be asymmetric. This design not only elevates IP-0.1dB by over 50 % compared to the conventional symmetric topology, but also absorbing its function into the input matching network (IMN) of the low noise amplifier (LNA), thereby minimally impacting the noise figure (NF) of the RX chain. For the TX path, the high-pass component of the power amplifier (PA) output matching network (OMN) is repurposed, with a singular inductor being redeployed to serve as an inductive ESD safeguard. Moreover, the driving stage employs a passive gain-boosting technique, which elevates the gain by 3 dB compared to the traditional cascode structure. For verification, this TRFE is fabricated in 0.18-μm CMOS with a die size of 1.53 mm2. It achieves a NF of 2.4 dB and a RX gain of 16.7 dB under a 3.3-V supply. A TX gain of 26.2 dB and a saturation output power of 23.3 dBm with a peak power-added efficiency (PAE) of 38.8 % are also demonstrated.

采用高线性度 ATRSW 的多开关控制多模式 TRFE,适用于 2.4-GHz ISM 应用
本文介绍了一种为 2.4 GHz 工业-科学-医疗(ISM)频段设计的多开关控制多模式收发器前端(TRFE),尤其侧重于提高天线侧发射/接收开关(TRSW)的线性度。考虑到 RX/TX 路径的不同功率水平,TRSW 被设计成非对称的。与传统的对称拓扑结构相比,这种设计不仅能将 IP-0.1dB 提升 50%以上,还能将其功能吸收到低噪声放大器(LNA)的输入匹配网络(IMN)中,从而将对 RX 链噪声系数(NF)的影响降至最低。在发送路径上,功率放大器(PA)输出匹配网络(OMN)的高通元件被重新利用,其中一个电感器被重新部署为电感式 ESD 保护器。此外,驱动级采用了无源增益增强技术,与传统的级联结构相比,增益提高了 3 dB。为进行验证,该 TRFE 采用 0.18μm CMOS 制作,芯片尺寸为 1.53 mm2。在 3.3 V 电源下,它实现了 2.4 dB 的 NF 和 16.7 dB 的 RX 增益。此外,还展示了 26.2 dB 的 TX 增益和 23.3 dBm 的饱和输出功率,以及 38.8 % 的峰值功率附加效率 (PAE)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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