A 2-GS/s Time-Interleaved ADC With Embedded Background Calibrations and a Novel Reference Buffer for Reduced Inter-Channel Crosstalk

IF 4.6 1区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Luca Ricci;Gabriele Bè;Michele Rocco;Lorenzo Scaletti;Gabriele Zanoletti;Luca Bertulessi;Andrea L. Lacaita;Salvatore Levantino;Carlo Samori;Andrea Bonfanti
{"title":"A 2-GS/s Time-Interleaved ADC With Embedded Background Calibrations and a Novel Reference Buffer for Reduced Inter-Channel Crosstalk","authors":"Luca Ricci;Gabriele Bè;Michele Rocco;Lorenzo Scaletti;Gabriele Zanoletti;Luca Bertulessi;Andrea L. Lacaita;Salvatore Levantino;Carlo Samori;Andrea Bonfanti","doi":"10.1109/JSSC.2024.3437168","DOIUrl":null,"url":null,"abstract":"Time-interleaved (TI) analog-to-digital converters (ADCs) are an established architecture, but fundamental problems still exist that prevent replicating the performance of each sub-ADC to the overall TI ADC. This article presents different techniques to overcome the main challenges in implementing an interleaved converter: 1) driving the ADC with sufficient linearity and bandwidth; 2) avoiding the crosstalk through the reference voltage; and 3) mitigating the effect of inter-channel mismatches. The proposed techniques are applied to a 2-GS/s TI ADC implemented in a TSMC 28-nm bulk CMOS process consisting of eight 11-bit 250-MS/s successive approximation register (SAR) ADCs. The prototype achieves a signal-to-noise plus distortion ratio (SNDR) and a spurious-free dynamic range (SFDR) of 57.3 dB and <inline-formula> <tex-math>$\\mathrm {70.1~dBc }$ </tex-math></inline-formula>, respectively. The SNDR degrades on average by only 1.76 dB compared with the sub-ADCs, demonstrating the effectiveness of the proposed techniques. With a power consumption of 118.6 mW, including input buffer, digital calibrations, and SAR ADCs, the TI ADC achieves a <inline-formula> <tex-math>$\\mathrm {99~\\text {d}\\text {J} /\\mathrm {conv-step} }$ </tex-math></inline-formula> Walden figure of merit (FoM) and a 156.6 dB Schreier FoM.","PeriodicalId":13129,"journal":{"name":"IEEE Journal of Solid-state Circuits","volume":"60 2","pages":"456-468"},"PeriodicalIF":4.6000,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Solid-state Circuits","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10633775/","RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Time-interleaved (TI) analog-to-digital converters (ADCs) are an established architecture, but fundamental problems still exist that prevent replicating the performance of each sub-ADC to the overall TI ADC. This article presents different techniques to overcome the main challenges in implementing an interleaved converter: 1) driving the ADC with sufficient linearity and bandwidth; 2) avoiding the crosstalk through the reference voltage; and 3) mitigating the effect of inter-channel mismatches. The proposed techniques are applied to a 2-GS/s TI ADC implemented in a TSMC 28-nm bulk CMOS process consisting of eight 11-bit 250-MS/s successive approximation register (SAR) ADCs. The prototype achieves a signal-to-noise plus distortion ratio (SNDR) and a spurious-free dynamic range (SFDR) of 57.3 dB and $\mathrm {70.1~dBc }$ , respectively. The SNDR degrades on average by only 1.76 dB compared with the sub-ADCs, demonstrating the effectiveness of the proposed techniques. With a power consumption of 118.6 mW, including input buffer, digital calibrations, and SAR ADCs, the TI ADC achieves a $\mathrm {99~\text {d}\text {J} /\mathrm {conv-step} }$ Walden figure of merit (FoM) and a 156.6 dB Schreier FoM.
具有嵌入式背景校准和新型参考缓冲器的 2-GS/s 时交错 ADC,可降低通道间串扰
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
IEEE Journal of Solid-state Circuits
IEEE Journal of Solid-state Circuits 工程技术-工程:电子与电气
CiteScore
11.00
自引率
20.40%
发文量
351
审稿时长
3-6 weeks
期刊介绍: The IEEE Journal of Solid-State Circuits publishes papers each month in the broad area of solid-state circuits with particular emphasis on transistor-level design of integrated circuits. It also provides coverage of topics such as circuits modeling, technology, systems design, layout, and testing that relate directly to IC design. Integrated circuits and VLSI are of principal interest; material related to discrete circuit design is seldom published. Experimental verification is strongly encouraged.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信