Kanishk Singh;Chao-Hung Chen;Li-Chia Tai;Wei-Chen Huang;Tung-Ming Pan
{"title":"Label-Free EGFR Sensing by Using a Flexible IrOx Extended-Gate Field-Effect Transistor-Based Biosensor","authors":"Kanishk Singh;Chao-Hung Chen;Li-Chia Tai;Wei-Chen Huang;Tung-Ming Pan","doi":"10.1109/LSENS.2024.3436106","DOIUrl":null,"url":null,"abstract":"In this research work, we present a flexible iridium oxide (IrO\n<italic><sub>x</sub></i>\n) extended-gate field-effect transistor (EGFET) biosensor for label-free detection of the epidermal growth factor receptor (EGFR) biomarker. IrO\n<italic><sub>x</sub></i>\n was employed as the sensing membrane material due to its excellent electrochemical properties, high conductivity, stability, biocompatibility, and ability to facilitate redox reactions. The IrO\n<italic><sub>x</sub></i>\n film was deposited on a flexible polyimide (PI) substrate through a sol–gel process and characterized using atomic force microscopy and X-ray photoelectron spectroscopy. As a pH sensor, the IrO\n<italic><sub>x</sub></i>\n EGFET exhibited a super-Nernstian sensitivity of 68.54 mV/pH with high linearity, a low hysteresis of ∼ 6 mV, and a drift rate of 0.50 mV/h at pH 7 over 12 h. For EGFR detection, the IrO\n<italic><sub>x</sub></i>\n surface was functionalized with 3-aminopropyltriethoxysilane and glutaraldehyde to immobilize anti-EGFR antibodies. The EGFR sensor demonstrated a wide linear detection range from 1 to 1000 ng/mL with a sensitivity of 11.78 mV/log(ng/mL) and a linearity of 99.8%, making it suitable for clinical EGFR monitoring in cancer patients. The flexible IrO\n<italic><sub>x</sub></i>\n EGFET shows promise for reliable label-free detection of EGFR.","PeriodicalId":13014,"journal":{"name":"IEEE Sensors Letters","volume":null,"pages":null},"PeriodicalIF":2.2000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10616222/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this research work, we present a flexible iridium oxide (IrO
x
) extended-gate field-effect transistor (EGFET) biosensor for label-free detection of the epidermal growth factor receptor (EGFR) biomarker. IrO
x
was employed as the sensing membrane material due to its excellent electrochemical properties, high conductivity, stability, biocompatibility, and ability to facilitate redox reactions. The IrO
x
film was deposited on a flexible polyimide (PI) substrate through a sol–gel process and characterized using atomic force microscopy and X-ray photoelectron spectroscopy. As a pH sensor, the IrO
x
EGFET exhibited a super-Nernstian sensitivity of 68.54 mV/pH with high linearity, a low hysteresis of ∼ 6 mV, and a drift rate of 0.50 mV/h at pH 7 over 12 h. For EGFR detection, the IrO
x
surface was functionalized with 3-aminopropyltriethoxysilane and glutaraldehyde to immobilize anti-EGFR antibodies. The EGFR sensor demonstrated a wide linear detection range from 1 to 1000 ng/mL with a sensitivity of 11.78 mV/log(ng/mL) and a linearity of 99.8%, making it suitable for clinical EGFR monitoring in cancer patients. The flexible IrO
x
EGFET shows promise for reliable label-free detection of EGFR.