Thermal Resistance of LEDs Based on a Narrow-Gap InAsSb Solid Solution

Abstract

This paper examines the thermal resistance of the mid-infrared “flip-chip” LEDs based on the p‑InAsSbP/n-InAsSb heterostructure. It was shown that the measurement of thermal resistance via a thermal control unit (forward p–n junction voltage) for LEDs based on narrow-gap semiconductors must be carried out at low temperature when thermal control unit is constant.