Physical Strategies for Geometric Control of Transition Metal Dichalcogenide Atomic Layers by Chemical Vapor Deposition (Adv. Phys. Res. 8/2024)

Jing Yi Tee, Mark John, Wei Fu, Thathsara D. Maddumapatabandi, Fabio Bussolotti, Calvin Pei Yu Wong, Kuan Eng Johnson Goh
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Abstract

Chemical Vapor Deposition

In the growth of two-dimensional transition metal dichalcogenide crystals, tuning the mix of physical mechanisms like thermodynamics and kinetics can enable phase engineering and shape control of such crystals for advanced applications. In their review article 2300146, W. Fu, K.E.J. Goh and co-workers provide an updated guidance for exploiting these physical strategies in the technique of chemical vapor deposition.

Abstract Image

通过化学气相沉积实现二卤化过渡金属原子层几何控制的物理策略(Adv. Phys. Res.)
化学气相沉积在二维过渡金属二钴化物晶体的生长过程中,调整热力学和动力学等物理机制的组合可以实现相工程和晶体形状控制,从而实现先进的应用。在 2300146 号评论文章中,W. Fu、K.E.J. Goh 及其合作者为在化学气相沉积技术中利用这些物理策略提供了最新指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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