Optimizing SiGe–SiO2 Visible–Short-Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Muhammad Taha Sultan, Ionel Stavarache, Andrei Manolescu, Unnar Bjarni Arnalds, Valentin Serban Teodorescu, Halldor Gudfinnur Svavarsson, Snorri Ingvarsson, Magdalena Lidia Ciurea
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Abstract

SiGe-SiO2-based structures present high interest for their high photosensitivity from visible to short-wavelength infrared. Herein, two postdeposition annealing procedures, that is, rapid thermal annealing (RTA) and rapid-like furnace annealing (FA), are compared. Both RTA and FA are performed at 600 °C for 1 min for SiGe nanocrystals (NCs) formation in SiO2 matrix in Si/SiO2/SiGe/SiO2 structures deposited by magnetron sputtering. The FA imitates RTA resulting in enhanced spectral response. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy are carried out showing Ge-rich SiGe NCs with 11.3 ± 1.2 nm size for RTA and 9.4 ± 0.8 nm for FA. Photocurrent spectra for both structures show several peaks that are annealing dependent. The photocurrent intensity for FA samples is ≈7 times higher than RTA samples while cutoff wavelengths are slightly different, that is, 1365 nm for FA and 1375 nm for RTA. The FA structures show (at −1.5 V) over 4 A W−1 responsivity at 730 nm, 6.4 × 107 Jones detectivity at 735 nm, and 2.2 × 107 Jones at about 1210 nm. FA structures contain small SiGe NCs with incorporated residual strain, while RTA ones are formed of columnar SiGe NCs separated by SiGeOx amorphous regions and show increased tensile strain in the SiGe.

Abstract Image

通过退火调节应变和缺陷之间的相互作用优化 SiGe-SiO2 可见短波红外光响应
基于 SiGe-SiO2 的结构因其从可见光到短波红外线的高光敏性而备受关注。本文比较了两种沉积后退火程序,即快速热退火(RTA)和快速类炉退火(FA)。在磁控溅射沉积的 Si/SiO2/SiGe/SiO2 结构中,在 SiO2 基体中形成 SiGe 纳米晶体(NCs)时,RTA 和 FA 均在 600 °C 下进行,时间均为 1 分钟。FA 模仿了 RTA,从而增强了光谱响应。X 射线衍射、透射电子显微镜和拉曼光谱显示,RTA 的富锗硅锗 NCs 尺寸为 11.3 ± 1.2 nm,FA 的富锗硅锗 NCs 尺寸为 9.4 ± 0.8 nm。两种结构的光电流光谱都显示出与退火有关的几个峰值。FA 样品的光电流强度是 RTA 样品的 7 倍,而截止波长略有不同,FA 为 1365 纳米,RTA 为 1375 纳米。FA 结构在 730 纳米波长处显示出(-1.5 V 时)超过 4 A W-1 的响应率,在 735 纳米波长处显示出 6.4 × 107 琼斯检测率,在约 1210 纳米波长处显示出 2.2 × 107 琼斯检测率。FA结构包含含有残余应变的小型SiGe NC,而RTA结构则由被SiGeOx非晶区分隔的柱状SiGe NC组成,并显示出SiGe中增加的拉伸应变。
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