A Multiphysical Field Dynamic Behavioral Model of Perpendicular STT-MTJ

IF 1 4区工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC

Iet Circuits Devices & Systems Pub Date : 2024-08-01 DOI:10.1049/2024/7632452

Wu Jianyu, Zheng Yifei, Zhang Hongli

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Abstract

The spin transfer tunnel magnetic tunnel junction (STT-MTJ) has been widely used in computers, memory, and other fields because of its nonvolatility, low power consumption, and high capacity for integration, attracting significant attention in recent years. Building an accurate and efficient magnetic tunnel junction (MTJ) behavior model is necessary to accurately describe the physical changes caused by variations in external excitation and guide the design and optimization of magnetic random access memory (MRAM). In this paper, we construct a multiphysical field dynamic behavior model of a perpendicular STT-MTJ, introducing temperature and frequency effects based on the Landau–Lifshitiz–Gilbert–Slinbczewski (LLGS) equation and a macro model. Compared with the LLGS model, our model simplifies the calculation of the tunneling current and shortens the simulation time by ~40%. Compared with the macro model, ours model can more accurately reflect the dynamic physical changes in magnetoresistance under a small signal and transient excitation. Simulation modeling and experimental comparison verify the temperature and frequency dependencies of the model. Our model provides guiding significance for the design, application, and research of MTJ devices’ electromagnetic compatibility characteristics.

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垂直 STT-MTJ 的多物理场动态行为模型

自旋传输隧道磁隧道结（STT-MTJ）因其不易挥发、低功耗和高集成度等特点，近年来在计算机、存储器等领域得到了广泛应用，引起了人们的极大关注。要准确描述外部激励变化引起的物理变化，指导磁随机存取存储器（MRAM）的设计和优化，就必须建立一个准确、高效的磁隧道结（MTJ）行为模型。本文基于 Landau-Lifshitiz-Gilbert-Slinbczewski (LLGS) 方程和宏观模型，引入温度和频率效应，构建了垂直 STT-MTJ 的多物理场动态行为模型。与 LLGS 模型相比，我们的模型简化了隧道电流的计算，并将模拟时间缩短了约 40%。与宏模型相比，我们的模型能更准确地反映小信号和瞬态激励下磁阻的动态物理变化。仿真建模和实验对比验证了模型的温度和频率依赖性。我们的模型为 MTJ 器件电磁兼容特性的设计、应用和研究提供了指导意义。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Iet Circuits Devices & Systems 工程技术-工程：电子与电气

CiteScore

3.80

自引率

7.70%

发文量

审稿时长

3 months

期刊介绍： IET Circuits, Devices & Systems covers the following topics: Circuit theory and design, circuit analysis and simulation, computer aided design Filters (analogue and switched capacitor) Circuit implementations, cells and architectures for integration including VLSI Testability, fault tolerant design, minimisation of circuits and CAD for VLSI Novel or improved electronic devices for both traditional and emerging technologies including nanoelectronics and MEMs Device and process characterisation, device parameter extraction schemes Mathematics of circuits and systems theory Test and measurement techniques involving electronic circuits, circuits for industrial applications, sensors and transducers