Hongyu Lu;Ahmed Gharib Gadelkarim;Jiannan Huang;Patrick P. Mercier
{"title":"A 0.69-mW Subsampling NB-IoT Receiver Employing a Linearized Q-Boosted LNA","authors":"Hongyu Lu;Ahmed Gharib Gadelkarim;Jiannan Huang;Patrick P. Mercier","doi":"10.1109/OJSSCS.2024.3416893","DOIUrl":null,"url":null,"abstract":"This article presents a receiver for narrowband IoT (NB-IoT) that eliminates the need for an RF local oscillator (LO) via a subsampling architecture. A pseudo-balun Q-boosted LNA provides sharp anti-aliasing filtering with a noise figure (NF) of 5.6 dB. A direct-coupling derivative superposition technique where low-\n<inline-formula> <tex-math>$V_{t}$ </tex-math></inline-formula>\n and thick-gate transistors with opposite nonlinear characteristics are combined to improve the measured IIP3 by 7 dB to −18 dBm with little NF overhead. Fabricated in 65-nm CMOS, the entire receiver, including the LNA, an S/H circuit, and a 10-bit SAR ADC, consumes only 0.69 mW while meeting NB-IoT specifications.","PeriodicalId":100633,"journal":{"name":"IEEE Open Journal of the Solid-State Circuits Society","volume":"4 ","pages":"57-68"},"PeriodicalIF":0.0000,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10564201","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Open Journal of the Solid-State Circuits Society","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10564201/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents a receiver for narrowband IoT (NB-IoT) that eliminates the need for an RF local oscillator (LO) via a subsampling architecture. A pseudo-balun Q-boosted LNA provides sharp anti-aliasing filtering with a noise figure (NF) of 5.6 dB. A direct-coupling derivative superposition technique where low-
$V_{t}$
and thick-gate transistors with opposite nonlinear characteristics are combined to improve the measured IIP3 by 7 dB to −18 dBm with little NF overhead. Fabricated in 65-nm CMOS, the entire receiver, including the LNA, an S/H circuit, and a 10-bit SAR ADC, consumes only 0.69 mW while meeting NB-IoT specifications.