20-THz Far-Infrared Imaging Using an Antenna-Coupled Schottky Barrier Diode in a Foundry CMOS

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IEEE microwave and wireless technology letters Pub Date : 2024-07-01 DOI:10.1109/LMWT.2024.3418455

Behnam Pouya

引用次数: 0

Abstract

This letter presents the implementation of a 20-terahertz (THz) far-infrared (FIR) imager using an antenna-coupled Schottky barrier diode (SBD) structure fabricated in a 130-nm foundry CMOS process without any process modifications. The detector’s performance is characterized using a 15.1-

$\mu $

m quantum-cascade laser (QCL) source. At a modulation frequency of 13 Hz, the detector achieves a peak optical responsivity (

$R_{v}$

) of 35.2 V/W, which is ~six times higher than that of CMOS detectors operating in a similar frequency range. The measured shot-noise limited noise equivalent power (NEP) is 1.8 nW/

$\surd $

Hz, which is comparable to that of commercially available thermopile detectors that are 47000 times larger in area.

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在代工 CMOS 中使用天线耦合肖特基势垒二极管进行 20-THz 远红外成像

本文介绍了一种 20 太赫兹（THz）远红外（FIR）成像器的实现情况，该成像器采用天线耦合肖特基势垒二极管（SBD）结构，在 130 纳米晶圆代工 CMOS 工艺中制造而成，无需对工艺进行任何修改。使用 15.1- $\mu $ m 量子级联激光器（QCL）光源对探测器的性能进行了鉴定。在 13 Hz 的调制频率下，该探测器的峰值光响应率（$R_{v}$ ）达到 35.2 V/W，是在类似频率范围内工作的 CMOS 探测器的六倍。测得的射噪限制噪声等效功率（NEP）为 1.8 nW/ $\surd $ Hz，与面积大 47000 倍的市售热电堆探测器相当。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE microwave and wireless technology letters

CiteScore

6.00

自引率

0.00%

发文量