{"title":"A Low-Cost Reflection Oscillator Using Substrate Integrated Coaxial Line Technology","authors":"Saurabh Shukla;Soumava Mukherjee","doi":"10.1109/LMWT.2024.3412922","DOIUrl":null,"url":null,"abstract":"This letter presents substrate integrated coaxial line technology (SICL)-based low phase noise (PN) reflection oscillator at 15 GHz. The proposed oscillator circuit is realized using SICL-based high-Q-factor resonator. The SICL resonator operates at 15 GHz, where the terminating impedance of the resonator is controlled by the appropriate selection of inset dimensions. Moreover, the proposed circuit satisfies the Kurokawa’s condition between the SICL resonator and the source terminal of active device with adjusting the length of short-circuited stub at the gate terminal in the SICL environment. Due to the high-Q factor of the SICL-based resonator, the prototype of the proposed oscillator achieved a low PN of −110 dBc/Hz at 100 kHz and −133 dBc/Hz at 1 MHz with an RF output power of 12 dBm.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 8","pages":"1035-1038"},"PeriodicalIF":0.0000,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10563190/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This letter presents substrate integrated coaxial line technology (SICL)-based low phase noise (PN) reflection oscillator at 15 GHz. The proposed oscillator circuit is realized using SICL-based high-Q-factor resonator. The SICL resonator operates at 15 GHz, where the terminating impedance of the resonator is controlled by the appropriate selection of inset dimensions. Moreover, the proposed circuit satisfies the Kurokawa’s condition between the SICL resonator and the source terminal of active device with adjusting the length of short-circuited stub at the gate terminal in the SICL environment. Due to the high-Q factor of the SICL-based resonator, the prototype of the proposed oscillator achieved a low PN of −110 dBc/Hz at 100 kHz and −133 dBc/Hz at 1 MHz with an RF output power of 12 dBm.