Low-high-low doped Ga2O3 Schottky barrier IMPATT diodes on various crystal orientations for terahertz applications

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2024-08-02 DOI:10.1016/j.mejo.2024.106350

Xin-Yi Wang, Lin-An Yang, Xuan Huang, Jian-Hua Zhou, Xiao-Hua Ma, Yue Hao

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引用次数: 0

Abstract

This article investigates low-high-low doped Ga₂O₃ Schottky barrier IMPATT diodes based on [100], [010], and [001] crystal orientations to promote oscillation power at the low-frequency band of terahertz regime. Simulation results demonstrate a conversion power of 4.88 MW/cm² along [100] at its optimum frequency of 100 GHz, increasing by 0.73 times and 2.2 times compared to the [100] at 150 GHz and the [001] at 100 GHz, and exhibit the highest conversion efficiency of 6.83 % along [010] as indicated by the DC-RF conversion ability promoting 37 % and 30 % than that of [100] and [001] orientations, respectively. When considering a parasitic resistance of 1 × 10⁻⁵ Ω cm², the optimal frequencies of along three orientations decrease to 90 GHz, 127 GHz, and 91 GHz, correspondingly, yielding the peak output power and total efficiency decrease by 0.3–0.4 times compared to those of the conversion characteristics.

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用于太赫兹应用的各种晶体取向的低-高-低掺杂 Ga2O3 肖特基势垒 IMPATT 二极管

本文研究了基于[100]、[010]和[001]晶向的低-高-低掺杂Ga2O3肖特基势垒IMPATT二极管，以提高太赫兹低频段的振荡功率。仿真结果表明，在 100 GHz 的最佳频率下，[100] 晶向的转换功率为 4.88 MW/cm2，比 150 GHz 时的[100] 晶向和 100 GHz 时的[001] 晶向分别提高了 0.73 倍和 2.2 倍；[010] 晶向的转换效率最高，达到 6.83%，直流-射频转换能力比[100] 晶向和[001] 晶向分别提高了 37% 和 30%。当考虑到寄生电阻为 1 × 10-5 Ω cm2 时，沿三个方向的最佳频率相应降至 90 GHz、127 GHz 和 91 GHz，从而使峰值输出功率和总效率比转换特性降低了 0.3-0.4 倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.