Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-08-06 DOI:10.1109/JSTQE.2024.3439526

Vyacheslav Timofeev;Ilya Skvortsov;Vladimir Mashanov;Alexandr Nikiforov;Ivan Loshkarev;Alexey Bloshkin;Victor Kirienko;Dmitry Kolyada;Dmitrii Firsov;Oleg Komkov

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引用次数: 0

Abstract

Multistacked GeSiSn/Si quantum dot (MQD) structures of different compositions were obtained by molecular-beam epitaxy. The elastically strained state of GeSiSn/Si MQD structures was confirmed by the presence of diffraction maxima on X-ray rocking curves. The optical properties of GeSiSn/Si MQD structures were studied by Fourier transform infrared (FTIR) photoluminescence spectroscopy. The structures exhibited photoluminescence peaks in the 0.6–0.8 eV range originating from the QD region. The calculations showed that the observed peaks correspond to the radiative transition between the Δ ₄ conduction band in Si and the energy level of heavy holes in the QDs. The peak positions in the PL spectra are in good correlation with the calculation results. It was demonstrated that the transition energy depends strongly on the composition and size of GeSiSn/Si QDs. The p-i-n photodiodes were developed based on the GeSiSn/Si MQD structures. The cutoff wavelength maximum reached the value of 2.65 μm for Ge _0.80 Si _0.11 Sn _0.09 /Si MQD p-i-n photodiodes.

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基于 MBE 的多堆叠 GeSiSn 量子点的结构、光学和电学特性

通过分子束外延技术获得了不同成分的多层 GeSiSn/Si 量子点（MQD）结构。X 射线摇摆曲线上出现的衍射最大值证实了 GeSiSn/Si MQD 结构的弹性应变状态。傅立叶变换红外（FTIR）光致发光光谱研究了 GeSiSn/Si MQD 结构的光学特性。这些结构在 0.6-0.8 eV 范围内显示出源于 QD 区域的光致发光峰。计算表明，观测到的峰值对应于硅中Δ4 导带与 QD 中重空穴能级之间的辐射转变。聚光光谱中的峰值位置与计算结果有很好的相关性。实验证明，跃迁能与 GeSiSn/Si QDs 的组成和尺寸密切相关。基于 GeSiSn/Si MQD 结构开发出了 pi-n 光电二极管。Ge0.80Si0.11Sn0.09/Si MQD p-i-n 光电二极管的截止波长最大值达到了 2.65 μm。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.