Anisotropy of Nitrogen Vacancy Diffusion in AlN with a Wurtzite Structure

IF 0.8 Q3 Engineering

Nanotechnologies in Russia Pub Date : 2024-08-06 DOI:10.1134/S2635167624600317

M. A Danilyak, I. V. Belov, V. G. Valeev

引用次数: 0

Abstract

The diffusion tensor of nitrogen vacancies in crystalline aluminum nitride with a wurtzite structure is calculated, and the nature of its dependence on the concentration of vacancies and the temperature of the system is studied. The results obtained are necessary for the development of a closed hydrodynamic description of the processes of formation and evolution of vacancy filaments in nitride memristive structures with resistive switching.

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具有沃特兹结构的氮化铝中氮空位扩散的各向异性

摘要计算了晶状氮化铝中的氮空位扩散张量，并研究了其与空位浓度和系统温度的关系。所获得的结果对于对具有电阻开关功能的氮化忆阻结构中空位丝的形成和演变过程进行封闭流体力学描述是必要的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnologies in Russia NANOSCIENCE & NANOTECHNOLOGY-

CiteScore

1.20

自引率

0.00%

发文量

期刊介绍： Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.