Facile synthesis and characterization of Cu2Se thin films and self-powered p-Cu2Se/n-Si heterojunction with high-performance photoresponse

IF 3.1 3区 物理与天体物理 Q2 PHYSICS, APPLIED
Der-Yuh Lin, Yu-Tai Shih, De-Jin Qiu, Yee-Mou Kao, Sheng-Beng Hwang, Ming-Cheng Kao and Chia-Feng Lin
{"title":"Facile synthesis and characterization of Cu2Se thin films and self-powered p-Cu2Se/n-Si heterojunction with high-performance photoresponse","authors":"Der-Yuh Lin, Yu-Tai Shih, De-Jin Qiu, Yee-Mou Kao, Sheng-Beng Hwang, Ming-Cheng Kao and Chia-Feng Lin","doi":"10.1088/1361-6463/ad687c","DOIUrl":null,"url":null,"abstract":"A facile, cost-effective, and scalable chemical vapor deposition technique was used to synthesize p-type Cu2Se thin films on glass and n-type Si substrates. Thorough characterization confirmed the films’ β-phase structure with the correct stoichiometric ratio and exceptional crystalline quality, exhibiting behavior akin to a degenerate semiconductor. Measurements unveiled a work function of 4.83 eV and a bandgap of 2.13 eV for Cu2Se. The fabrication of a p-Cu2Se/n-Si heterojunction was achieved by depositing the p-type Cu2Se thin film onto the n-type Si substrate. The resulting heterostructure displayed rectification behavior, and its energy band diagram resembled a Schottky diode. Further exploration into its photoelectric properties showcased the p-Cu2Se/n-Si heterostructure’s favorable self-powered attribute, characterized by fast, steady, reproducible, sensitive, and robust photoresponsive performance. Consequently, it proves highly suitable for applications in high-frequency photodetectors. Additionally, the p-Cu2Se/n-Si heterojunction’s photovoltaic power conversion efficiency exceeded the reported values of the CuO/Si and Cu2O/Si systems. Here, this study contributes significantly to the pivotal evaluation of p-Cu2Se/n-Si heterostructures for promising optoelectronic applications.","PeriodicalId":16789,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":3.1000,"publicationDate":"2024-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D: Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad687c","RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0

Abstract

A facile, cost-effective, and scalable chemical vapor deposition technique was used to synthesize p-type Cu2Se thin films on glass and n-type Si substrates. Thorough characterization confirmed the films’ β-phase structure with the correct stoichiometric ratio and exceptional crystalline quality, exhibiting behavior akin to a degenerate semiconductor. Measurements unveiled a work function of 4.83 eV and a bandgap of 2.13 eV for Cu2Se. The fabrication of a p-Cu2Se/n-Si heterojunction was achieved by depositing the p-type Cu2Se thin film onto the n-type Si substrate. The resulting heterostructure displayed rectification behavior, and its energy band diagram resembled a Schottky diode. Further exploration into its photoelectric properties showcased the p-Cu2Se/n-Si heterostructure’s favorable self-powered attribute, characterized by fast, steady, reproducible, sensitive, and robust photoresponsive performance. Consequently, it proves highly suitable for applications in high-frequency photodetectors. Additionally, the p-Cu2Se/n-Si heterojunction’s photovoltaic power conversion efficiency exceeded the reported values of the CuO/Si and Cu2O/Si systems. Here, this study contributes significantly to the pivotal evaluation of p-Cu2Se/n-Si heterostructures for promising optoelectronic applications.
Cu2Se 薄膜和具有高性能光响应的自供电 p-Cu2Se/n-Si 异质结的简易合成与表征
该研究采用了一种简便、经济、可扩展的化学气相沉积技术,在玻璃和 n 型硅基底上合成了 p 型 Cu2Se 薄膜。彻底的表征证实了薄膜的 β 相结构具有正确的化学计量比和优异的结晶质量,表现出类似于退变型半导体的行为。测量结果显示,Cu2Se 的功函数为 4.83 eV,带隙为 2.13 eV。通过在 n 型硅衬底上沉积 p 型 Cu2Se 薄膜,实现了 p-Cu2Se/n-Si 异质结的制造。由此产生的异质结显示出整流行为,其能带图类似于肖特基二极管。对其光电特性的进一步研究表明,p-Cu2Se/n-Si 异质结构具有良好的自供电特性,其特点是快速、稳定、可重现、灵敏和稳健的光致发光性能。因此,它非常适合应用于高频光电探测器。此外,p-Cu2Se/n-Si 异质结的光电转换效率超过了 CuO/Si 和 Cu2O/Si 系统的报告值。这项研究为评估对铜2硅/非晶硅异质结构的光电应用前景做出了重要贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信