Yunkai Li, Lige Wang, Ruizhi Yang, Li Liang, Qingdong Luan, Jing Liu
{"title":"Enhanced Thermoelectric Performance of Cu2−xRExSe (x = 0–0.2) by Doping with Rare Earth Elements Tm, Er, and Lu","authors":"Yunkai Li, Lige Wang, Ruizhi Yang, Li Liang, Qingdong Luan, Jing Liu","doi":"10.1007/s11664-024-11349-6","DOIUrl":null,"url":null,"abstract":"<p>Copper selenide (Cu<sub>2</sub>Se) has attracted extensive research interest in the field of thermoelectricity due to its large abundance of constituent elements, environmental friendliness, and excellent thermoelectric properties. In this study, a facile and low-cost hydrothermal synthesis method combined with vacuum sintering was used for Cu<sub>2</sub>Se-based sample preparation, and the possibility of improving the thermoelectric properties of Cu<sub>2</sub>Se by doping with rare earth elements (Tm, Er, Lu) was explored using experimental tests and density functional theory calculations. The electronic structure calculations show that the electrical conductivity is increased due to the increased electron density after rare earth element doping. At the same time, the sharp increase in the density of states at the Fermi level after rare earth element doping enhances the Seebeck coefficient of the Cu<sub>2</sub>Se matrix. The experimental results show that the thermoelectric properties of all the samples doped with rare earth elements (Tm, Er, Lu) were improved compared to the Cu<sub>2</sub>Se matrix. The doping of rare earth elements led to an increase in point defects and the formation of pores in the samples, which play an important role in reducing the thermal conductivity. Among them, the Tm-doped Cu<sub>1.995</sub>Tm<sub>0.005</sub>Se sample reached a maximum ZT value of 0.80 at 773 K, which is a nearly 43% increase compared to the Cu<sub>2</sub>Se matrix (ZT<sub>max</sub> = 0.56).</p>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"58 1","pages":""},"PeriodicalIF":2.2000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s11664-024-11349-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Copper selenide (Cu2Se) has attracted extensive research interest in the field of thermoelectricity due to its large abundance of constituent elements, environmental friendliness, and excellent thermoelectric properties. In this study, a facile and low-cost hydrothermal synthesis method combined with vacuum sintering was used for Cu2Se-based sample preparation, and the possibility of improving the thermoelectric properties of Cu2Se by doping with rare earth elements (Tm, Er, Lu) was explored using experimental tests and density functional theory calculations. The electronic structure calculations show that the electrical conductivity is increased due to the increased electron density after rare earth element doping. At the same time, the sharp increase in the density of states at the Fermi level after rare earth element doping enhances the Seebeck coefficient of the Cu2Se matrix. The experimental results show that the thermoelectric properties of all the samples doped with rare earth elements (Tm, Er, Lu) were improved compared to the Cu2Se matrix. The doping of rare earth elements led to an increase in point defects and the formation of pores in the samples, which play an important role in reducing the thermal conductivity. Among them, the Tm-doped Cu1.995Tm0.005Se sample reached a maximum ZT value of 0.80 at 773 K, which is a nearly 43% increase compared to the Cu2Se matrix (ZTmax = 0.56).
期刊介绍:
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.