Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga2O3 nano-HEMT

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-08-07 DOI:10.1002/jnm.3281

G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen, Nour El. I. Boukortt, Giovanni Crupi

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Abstract

In this article, a field-plated and recessed gate III-Nitride Nano-HEMT developed on β-Ga₂O₃ substrate is proposed and investigated for various performance characteristics over different temperatures. The 2DEG (Two Dimensional Electron Gas) dependence on temperature is critical for commercial utilization of GaN-based HEMTs (high electron mobility transistors). Here, the temperature influence on 2DEG for proposed HEMT over the range of 300–400 K has been investigated. The results demonstrate that the 2DEG density of proposed HEMT reduces as temperature increases. It has been observed that phonon scattering results in a sharp decline in the mobility of 2DEG as temperature increases, which causes the electric field to decrease. It also exhibited that the cut-off frequency decreased over the temperature changes from 300 to 400 K due to diminution in electron mobility. This research aims to contribute an extensive overview of proposed III-Nitride Nano-HEMT designed on a lattice-matched substrate of β-Ga₂O₃ to foster future research on the latest developments in this field.

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2DEG 的温度依赖性对场镀凹栅 III-氮化物/β-Ga2O3 纳米光刻管器件特性的影响

本文提出了一种在 β-Ga2O3 衬底上开发的场镀凹栅三氮化纳米 HEMT，并对其在不同温度下的各种性能特征进行了研究。2DEG（二维电子气体）与温度的关系对于氮化镓基 HEMT（高电子迁移率晶体管）的商业利用至关重要。在此，我们研究了拟议的 HEMT 在 300-400 K 范围内的温度对二维电子气体的影响。结果表明，拟议 HEMT 的 2DEG 密度随着温度的升高而降低。据观察，声子散射导致 2DEG 的迁移率随着温度升高而急剧下降，从而导致电场减小。研究还表明，由于电子迁移率的降低，截止频率在 300 至 400 K 的温度变化过程中有所降低。本研究旨在广泛介绍在晶格匹配的β-Ga2O3衬底上设计的III-氮化物纳米HEMT，以促进该领域未来最新发展的研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.