{"title":"High-dielectric-constant microwave dielectric in the (16–x–y)CaO–xSrO–yBaO–Li2O–Sm2O3–Nd2O3–TiO2 ceramic system","authors":"Ting-Hao Lin, Ching-Cheng Huang, Tsung-Hsien Hsu, Cheng-Liang Huang","doi":"10.1007/s10854-024-13256-2","DOIUrl":null,"url":null,"abstract":"<div><p>This article presents the successful synthesis and characterization of a novel high dielectric constant ceramic system with near-zero temperature coefficient for microwave applications. The system, based on the 5CaO–10SrO–BaO–9Li<sub>2</sub>O–10Sm<sub>2</sub>O<sub>3</sub>–2Nd<sub>2</sub>O<sub>3</sub>–63TiO<sub>2</sub> composition, was developed through a systematic modification of the non-stoichiometric CaO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub> (16:9:10:2:63) ceramic system using the conventional solid-state method. The initial focus of the study was on the effect of Sr substitution for Ca. By varying the Sr content from 1 to 11 mol% and sintering at temperatures ranging from 1120 to 1240 °C, it was observed that increasing Sr substitution led to a higher dielectric constant (<i>ε</i><sub><i>r</i></sub>), while the quality factor multiplied by the resonant frequency (<i>Q</i> × <i>f</i>) decreased, and the temperature coefficient of resonant frequency (<i>τ</i><sub><i>f</i></sub>) increased. Notably, at 1180 °C, the optimized composition with 11 mol% Sr substitution (CaO–SrO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub> = 5: 11: 9: 10: 2: 63) achieved a dielectric constant of 140 and an acceptable <i>Q</i> × <i>f</i> value of 1,100 GHz. However, the <i>τ</i><sub><i>f</i></sub> value was measured as 49.7 ppm/°C, highlighting the need for further optimization for practical applications. To address the issue of the relatively high <i>τ</i><sub><i>f</i></sub>, 1 mol% of BaO was partially substituted for SrO. This substitution resulted in the formation of a Ba-substituted CSBLSNT phase, which successfully improved the <i>τ</i><sub><i>f</i></sub> to near-zero while maintaining a moderate <i>ε</i><sub><i>r</i></sub>. The optimized composition, with a molar ratio of 5: 10: 1: 9: 10:2: 63 for CaO–SrO–BaO–Li<sub>2</sub>O–Sm<sub>2</sub>O<sub>3</sub>–Nd<sub>2</sub>O<sub>3</sub>–TiO<sub>2</sub>, was sintered at 1180 °C for 4 h. The resulting ceramic exhibited excellent dielectric properties: <i>ε</i><sub><i>r</i></sub> = 132, <i>Q</i> × <i>f</i> = 1,200 GHz, <i>τ</i><sub><i>f</i></sub> = 5.3 ppm/°C. The combination of a high dielectric constant and near-zero <i>τ</i><sub><i>f</i></sub> value makes this ceramic system highly promising for the fabrication of smaller, more thermally stable microwave components.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13256-2","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This article presents the successful synthesis and characterization of a novel high dielectric constant ceramic system with near-zero temperature coefficient for microwave applications. The system, based on the 5CaO–10SrO–BaO–9Li2O–10Sm2O3–2Nd2O3–63TiO2 composition, was developed through a systematic modification of the non-stoichiometric CaO–Li2O–Sm2O3–Nd2O3–TiO2 (16:9:10:2:63) ceramic system using the conventional solid-state method. The initial focus of the study was on the effect of Sr substitution for Ca. By varying the Sr content from 1 to 11 mol% and sintering at temperatures ranging from 1120 to 1240 °C, it was observed that increasing Sr substitution led to a higher dielectric constant (εr), while the quality factor multiplied by the resonant frequency (Q × f) decreased, and the temperature coefficient of resonant frequency (τf) increased. Notably, at 1180 °C, the optimized composition with 11 mol% Sr substitution (CaO–SrO–Li2O–Sm2O3–Nd2O3–TiO2 = 5: 11: 9: 10: 2: 63) achieved a dielectric constant of 140 and an acceptable Q × f value of 1,100 GHz. However, the τf value was measured as 49.7 ppm/°C, highlighting the need for further optimization for practical applications. To address the issue of the relatively high τf, 1 mol% of BaO was partially substituted for SrO. This substitution resulted in the formation of a Ba-substituted CSBLSNT phase, which successfully improved the τf to near-zero while maintaining a moderate εr. The optimized composition, with a molar ratio of 5: 10: 1: 9: 10:2: 63 for CaO–SrO–BaO–Li2O–Sm2O3–Nd2O3–TiO2, was sintered at 1180 °C for 4 h. The resulting ceramic exhibited excellent dielectric properties: εr = 132, Q × f = 1,200 GHz, τf = 5.3 ppm/°C. The combination of a high dielectric constant and near-zero τf value makes this ceramic system highly promising for the fabrication of smaller, more thermally stable microwave components.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.