{"title":"Effect of simultaneous substitution of Sr and Ca in LaMnO3 thin-film electrode prepared via in situ sol–gel process","authors":"Shaikh Omar, S. B. Kulkarni","doi":"10.1007/s10854-024-13263-3","DOIUrl":null,"url":null,"abstract":"<div><p>The utilization of sophisticated deposition techniques for synthesizing metal oxide thin films across various applications is essential, particularly in supercapacitors where thin films have become indispensable. While advanced instruments enhance the quality of the film, they also escalate the manufacturing costs. It is evident that film with fine thickness exhibits high specific capacitance, but the stability is compromised. Conversely increasing the thickness reduces the capacitance, creating a challenging cycle. In this study, we prepare a direct gel-based film via sol–gel process and investigate the electrochemical properties of LaMnO<sub>3</sub> by simultaneously substituting strontium (Sr) and calcium (Ca), and this substituted material was termed as La<sub>0.67</sub>Sr<sub>0.165</sub>Ca<sub>0.165</sub>MnO<sub>3</sub> (LSCMO) synthesized at concentration of <i>x</i> = <i>x</i><sub>1</sub> + <i>x</i><sub>2</sub>, where <i>x</i> = 0.33 and <i>x</i><sub>1</sub> = <i>x</i><sub>2</sub> = 0.165. X-ray diffraction (XRD) studies show the presence of rhombohedral LSMO and orthorhombic LCMO phases. The scanning electron microscopy (SEM) images showed a non-uniform planar structure. Fourier Transform Infrared spectroscopy analysis of the presence of BO<sub>6</sub> Octahedra confirming the perovskite structure. The gel-based thin film was deployed to cyclic voltammetry (CV) analysis for potential window ranging from 0 to 1.4 and the specific capacitance was found to be 4474 mF/cm<sup>2</sup> at 10 mV/s with the least resistance inside the film which was calculated using the electrochemical impedance spectroscopy (EIS).</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":null,"pages":null},"PeriodicalIF":2.8000,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-024-13263-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The utilization of sophisticated deposition techniques for synthesizing metal oxide thin films across various applications is essential, particularly in supercapacitors where thin films have become indispensable. While advanced instruments enhance the quality of the film, they also escalate the manufacturing costs. It is evident that film with fine thickness exhibits high specific capacitance, but the stability is compromised. Conversely increasing the thickness reduces the capacitance, creating a challenging cycle. In this study, we prepare a direct gel-based film via sol–gel process and investigate the electrochemical properties of LaMnO3 by simultaneously substituting strontium (Sr) and calcium (Ca), and this substituted material was termed as La0.67Sr0.165Ca0.165MnO3 (LSCMO) synthesized at concentration of x = x1 + x2, where x = 0.33 and x1 = x2 = 0.165. X-ray diffraction (XRD) studies show the presence of rhombohedral LSMO and orthorhombic LCMO phases. The scanning electron microscopy (SEM) images showed a non-uniform planar structure. Fourier Transform Infrared spectroscopy analysis of the presence of BO6 Octahedra confirming the perovskite structure. The gel-based thin film was deployed to cyclic voltammetry (CV) analysis for potential window ranging from 0 to 1.4 and the specific capacitance was found to be 4474 mF/cm2 at 10 mV/s with the least resistance inside the film which was calculated using the electrochemical impedance spectroscopy (EIS).
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.