R. M. Sánchez-Albores, Odín Reyes-Vallejo, F. Pola-Albores, A. Fernández-Madrigal, Andrés López-López, E. Ríos-Valdovinos
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引用次数: 0
Abstract
In this study, we report the development of a BiVO4/ZnFe2O4 heterostructure and its characterization as a photoanode in solar water splitting. ZnFe2O4 was deposited on a BiVO4 thin film after electrodepositing varying charges of FeOOH (50, 100, and 250 mC), which were then thermally oxidized in the presence of air and a zinc source. Structural characterization via XRD and profilometry indicated an increase in film thickness with higher deposited charges. The analysis revealed a decrease in strain and Urbach energy, indicative of reduced structural defects and an increase in the bandgap. SEM images illustrated the porous nature of the film surfaces, with elongated 2D structures enhancing light absorption through multiple reflectance effects. However, increased charge deposition led to particle agglomeration, reducing light absorption efficiency and active surface area, thus diminishing photogenerated charge generation. Electrochemical and photoelectrochemical characterization confirmed the n-type nature of all films, with carrier concentration increasing with film thickness. Nevertheless, the thinnest film (50 mC) exhibited the highest photocurrent, attributed to reduced particle agglomeration, enhanced light absorption, greater charge transport capacity, and superior electrocatalytic behavior, thereby minimizing recombination effects. Overall, the heterostructure demonstrated suitability as a photoanode for oxygen evolution reaction, supported by correct band alignment as determined from flat band potentials.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.