Development of the BiVO4/ZnFe2O4 heterostructure for solar water splitting

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R. M. Sánchez-Albores, Odín Reyes-Vallejo, F. Pola-Albores, A. Fernández-Madrigal, Andrés López-López, E. Ríos-Valdovinos
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Abstract

In this study, we report the development of a BiVO4/ZnFe2O4 heterostructure and its characterization as a photoanode in solar water splitting. ZnFe2O4 was deposited on a BiVO4 thin film after electrodepositing varying charges of FeOOH (50, 100, and 250 mC), which were then thermally oxidized in the presence of air and a zinc source. Structural characterization via XRD and profilometry indicated an increase in film thickness with higher deposited charges. The analysis revealed a decrease in strain and Urbach energy, indicative of reduced structural defects and an increase in the bandgap. SEM images illustrated the porous nature of the film surfaces, with elongated 2D structures enhancing light absorption through multiple reflectance effects. However, increased charge deposition led to particle agglomeration, reducing light absorption efficiency and active surface area, thus diminishing photogenerated charge generation. Electrochemical and photoelectrochemical characterization confirmed the n-type nature of all films, with carrier concentration increasing with film thickness. Nevertheless, the thinnest film (50 mC) exhibited the highest photocurrent, attributed to reduced particle agglomeration, enhanced light absorption, greater charge transport capacity, and superior electrocatalytic behavior, thereby minimizing recombination effects. Overall, the heterostructure demonstrated suitability as a photoanode for oxygen evolution reaction, supported by correct band alignment as determined from flat band potentials.

Abstract Image

Abstract Image

开发用于太阳能水分离的 BiVO4/ZnFe2O4 异质结构
在本研究中,我们报告了 BiVO4/ZnFe2O4 异质结构的开发及其作为太阳能水分离光阳极的表征。在电沉积不同电荷的 FeOOH(50、100 和 250 mC)后,ZnFe2O4 被沉积在 BiVO4 薄膜上,然后在空气和锌源存在下进行热氧化。通过 XRD 和轮廓仪进行的结构表征表明,沉积电荷越高,薄膜厚度越大。分析表明,应变和厄巴赫能降低,表明结构缺陷减少,带隙增大。扫描电子显微镜图像显示了薄膜表面的多孔性,细长的二维结构通过多重反射效应增强了光吸收。然而,电荷沉积的增加导致颗粒聚集,降低了光吸收效率和活性表面积,从而减少了光生电荷的产生。电化学和光电化学特性分析证实了所有薄膜的 n 型性质,载流子浓度随着薄膜厚度的增加而增加。然而,最薄的薄膜(50 mC)显示出最高的光电流,这归因于颗粒团聚减少、光吸收增强、电荷传输能力提高以及卓越的电催化行为,从而最大限度地减少了重组效应。总体而言,这种异质结构证明了其作为氧进化反应光阳极的适用性,而根据平坦带电位确定的正确带排列也为其提供了支持。
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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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