A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology

Abstract

Inductor-less CMOS filters with bandwidth exceeding several GHz are required in high-speed data converter applications. This paper introduces two complementary biquad filters, one N-based and the other P-based, utilizing the well-established flipped voltage follower (FVF) stage. These filters exhibit more than 7 GHz cut-off frequency and a low power consumption of 0.54 mW/pole for the N-type biquad, and 0.3 mW/pole for the P-type one, demonstrating impressive figures-of-merit (FOMs) even considering bandwidth and dynamic range. The implementation of these biquads in the STMicroelectronics FD-SOI 28-nm CMOS process, along with extensive simulations, ensures stable performance under process, supply voltage and temperature (PVT) variations and mismatches, as confirmed by post-layout simulations. Notably, the area occupied by each biquad is merely 246 μm² for N-type biquad and 193 μm² for P-type, marking one of the smallest footprints in the existing literature. The achieved figures-of-merit are noteworthy, showcasing excellent power efficiency, minimal area occupation, and commendable dynamic range.