Numerical modeling and extensive analysis of an extremely efficient RbGeI3-based perovskite solar cell by incorporating a variety of ETL and HTL materials to enhance PV performance

IF 3.2 Q2 CHEMISTRY, PHYSICAL
Energy advances Pub Date : 2024-08-08 DOI:10.1039/D4YA00323C
Md. Mojahidur Rahman, Md. Hasan Ali, Md. Dulal Haque and Abu Zafor Md. Touhidul Islam
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Abstract

The immense demand for electrical energy motivated us to manipulate solar energy by means of conversion through solar cells (SCs). Advancements in photovoltaic (PV) technology are occurring very rapidly. In recent years, extensive research has been conducted on halide perovskite-based SCs because of their superior optoelectronic properties, enhanced efficiency, lightweight nature, and low cost. However, concerns have arisen regarding their longevity, stability, and commerciality due to the presence of toxic lead (Pb). The most prominent purpose of this investigation is to discover additional efficient, sustainable, and eco-friendly device architectures. In this study, we investigated an all-inorganic, lead-free rubidium germanium iodide (RbGeI3)-based PSC device with the assistance of the SCAPS-1D simulator. Several electron transport layers (ETLs) and hole transport layers (HTLs) were incorporated with the perovskite layer, and an efficient primary structure was discovered. Then, the impact of temperature; back metal work function; series and shunt resistance; surface recombination velocity of carriers; thickness of the perovskite absorber layer, electron transport material (ETM), and hole transport material (HTM); carrier concentration of the perovskite absorber layer, ETM, and HTM; defect density of the perovskite absorber layer, ETM, and HTM; and defect density of the HTL/absorber and absorber/ETL interfaces on the PV performance of the proposed PSC device was analyzed. The optimized device exhibited a power conversion efficiency (PCE) of 30.35%, with superior values for open circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF) of 1.067 V, 33.15 mA cm−2, and 85.82%, respectively. The investigations in this study may be valuable and impactful to solar cell material researchers and move the research interest forward by one step so that experimental work with non-toxic RbGeI3-based PSC devices will be performed in the future.

Abstract Image

Abstract Image

通过采用各种 ETL 和 HTL 材料提高光伏性能,对基于 RbGeI3 的高效包晶体太阳能电池进行数值建模和广泛分析
对电能的巨大需求促使我们通过太阳能电池(SC)进行转换来利用太阳能。光伏(PV)技术的发展日新月异。近年来,人们对基于卤化物过氧化物的太阳能电池进行了广泛的研究,因为它们具有卓越的光电特性、更高的效率、轻质和低成本。然而,由于存在有毒的铅(Pb),人们对其寿命、稳定性和商业性产生了担忧。这项研究的最主要目的是发现更多高效、可持续和环保的器件架构。在这项研究中,我们在 SCAPS-1D 模拟器的帮助下,研究了一种基于无机无铅碘化铷锗(RbGeI3)的 PSC 器件。在过氧化物层中加入了多个电子传输层(ETL)和空穴传输层(HTL),并发现了一种高效的初级结构。然后,分析了温度;背金属功函数;串联和并联电阻;载流子表面重组速度;包晶吸收层、电子传输材料(ETM)和空穴传输材料(HTM)的厚度;包晶吸收层、ETM 和 HTM 的载流子浓度;包晶吸收层、ETM 和 HTM 的缺陷密度;以及 HTL/吸收层和吸收层/ETL 接口的缺陷密度对所提 PSC 器件光伏性能的影响。优化器件的功率转换效率 (PCE) 为 30.35%,开路电压 (Voc)、短路电流密度 (Jsc) 和填充因子 (FF) 分别为 1.067 V、33.15 mA cm-2 和 85.82%。这项研究可能对太阳能电池材料研究人员有价值和影响,并将研究兴趣向前推进了一步,从而在未来开展基于无毒 RbGeI3 的 PSC 器件的实验工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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