Effect of Amorphous Si-Zn-Sn-O Passivation Layer on Si-In-Zn-O Thin Film Transistors

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2024-08-08 DOI:10.1007/s12633-024-03105-6
Sandeep Kumar Maurya, Sang Yeol Lee
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引用次数: 0

Abstract

Bi-layer thin film transistors (TFTs) have been fabricated with improved field effect mobility and stability. These TFTs feature a unique channel structure comprising a dielectric layer, an amorphous-Si-In-Zn-O (a-SIZO) layer, and an amorphous-Si-Zn-Sn-O (a-SZTO) layer. Total resistance of the channel and contact resistance between the electrode and channel were determined using transmission line method (TLM). Precisely deposited thin films via RF sputtering at room temperature, our TFTs, equipped with a bottom gate top contact and processed at 500 \(^{\circ }\)C, exhibited outstanding characteristics. They showcased high mobilities exceeding 30 cm\(^2\)V\(^{-1}\)s\(^{-1}\), a current on/off ratio of approximately 10\(^9\), and a subthreshold swing (SS) value below 0.45 V decade\(^{-1}\). Furthermore, these bi-layer TFTs demonstrated stability under negative and positive bias stress, indicating their potential for reliable performance across a range of applications and promising advancements in TFT technology.

非晶态 Si-Zn-Sn-O 钝化层对 Si-In-Zn-O 薄膜晶体管的影响
双层薄膜晶体管(TFT)的制造提高了场效应迁移率和稳定性。这些 TFT 具有独特的沟道结构,包括介电层、非晶-Si-In-Zn-O (a-SIZO) 层和非晶-Si-Zn-Sn-O (a-SZTO) 层。利用传输线法(TLM)测定了通道的总电阻以及电极和通道之间的接触电阻。在室温下通过射频溅射精确沉积薄膜,我们的 TFT 配备了底栅顶部触点,并在 500 \(^{\circ }\)C 的温度下加工,表现出了卓越的特性。它们展示了超过 30 cm\(^2\)V\(^{-1}\)s\(^{-1}\) 的高迁移率、大约 10\(^9\) 的电流导通/关断比,以及低于 0.45 V decade\(^{-1}\) 的亚阈值摆幅(SS)值。此外,这些双层 TFT 在负偏压和正偏压应力下均表现出稳定性,这表明它们具有在各种应用中实现可靠性能的潜力,并有望推动 TFT 技术的发展。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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