{"title":"Study on crack law of shield segment under load variation based on XFEM","authors":"Hong Guo, Xiaokai Niu, Zhitian Xie","doi":"10.1108/ijsi-03-2024-0052","DOIUrl":null,"url":null,"abstract":"PurposeThe occurrence of segment cracks caused by load changes in shield tunnels would affect the safety of the tunnel structure. To this end, a three-dimensional fine shield tunnel segment model based on the extended finite element method (XFEM) is established.Design/methodology/approachThe cracking law of shield segment cracks is studied in two forms: overloading and unloading. The relationship between crack length, width and depth and transverse convergence and deformation is analyzed.FindingsThe results show that the cracks in shield tunnels mainly occur on the outer side of the arch waist and the inner side of the crown and bottom. Under overloading and unloading conditions, the length, width and depth of cracks increase non-linearly as the transverse convergence deformation increases. Under the same convergent deformation, the deeper the buried depth, the smaller the crack length, width and depth. Meanwhile, under overloading conditions, the influence of buried depth on the width and depth of cracks is more significant. In terms of crack width and depth, unloading conditions are more dangerous than overloading conditions.Originality/valueThe findings have a guiding effect for the management of cracks in shield tunnels during operation.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"51 8","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1108/ijsi-03-2024-0052","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
PurposeThe occurrence of segment cracks caused by load changes in shield tunnels would affect the safety of the tunnel structure. To this end, a three-dimensional fine shield tunnel segment model based on the extended finite element method (XFEM) is established.Design/methodology/approachThe cracking law of shield segment cracks is studied in two forms: overloading and unloading. The relationship between crack length, width and depth and transverse convergence and deformation is analyzed.FindingsThe results show that the cracks in shield tunnels mainly occur on the outer side of the arch waist and the inner side of the crown and bottom. Under overloading and unloading conditions, the length, width and depth of cracks increase non-linearly as the transverse convergence deformation increases. Under the same convergent deformation, the deeper the buried depth, the smaller the crack length, width and depth. Meanwhile, under overloading conditions, the influence of buried depth on the width and depth of cracks is more significant. In terms of crack width and depth, unloading conditions are more dangerous than overloading conditions.Originality/valueThe findings have a guiding effect for the management of cracks in shield tunnels during operation.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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Web of Science SCIE
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CAS
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