{"title":"High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al<sub>1-</sub> <sub>x</sub>Sc<sub>x</sub>N Thin Films.","authors":"Yang Zeng, Yihan Lei, Yanghe Wang, Mingqiang Cheng, Luocheng Liao, Xuyang Wang, Jinxin Ge, Zhenghao Liu, Wenjie Ming, Chao Li, Shuhong Xie, Jiangyu Li, Changjian Li","doi":"10.1002/smtd.202400722","DOIUrl":null,"url":null,"abstract":"<p><p>Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al<sub>1-</sub> <sub>x</sub>Sc<sub>x</sub>N) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al<sub>1-</sub> <sub>x</sub>Sc<sub>x</sub>N films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al<sub>1-</sub> <sub>x</sub>Sc<sub>x</sub>N thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µC cm<sup>-2</sup> via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.</p>","PeriodicalId":229,"journal":{"name":"Small Methods","volume":" ","pages":"e2400722"},"PeriodicalIF":10.7000,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Small Methods","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/smtd.202400722","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al1-xScxN) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al1-xScxN films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al1-xScxN thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µC cm-2 via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.
Small MethodsMaterials Science-General Materials Science
CiteScore
17.40
自引率
1.60%
发文量
347
期刊介绍:
Small Methods is a multidisciplinary journal that publishes groundbreaking research on methods relevant to nano- and microscale research. It welcomes contributions from the fields of materials science, biomedical science, chemistry, and physics, showcasing the latest advancements in experimental techniques.
With a notable 2022 Impact Factor of 12.4 (Journal Citation Reports, Clarivate Analytics, 2023), Small Methods is recognized for its significant impact on the scientific community.
The online ISSN for Small Methods is 2366-9608.