Influence of Ho, Gd, La Doping on Grain-Grain Boundary Characteristics and Minimization of Leakage Current in Nickel Ferrites

IF 1.8 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

ECS Journal of Solid State Science and Technology Pub Date : 2024-07-31 DOI:10.1149/2162-8777/ad6503

Sanchit Kumar, Chaitali Mondal, Abhigyan Dutta, Ankurava Sinha

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引用次数: 0

Abstract

This study explores the impact of doping with Ho, Gd, and La on sol-gel-derived nickel ferrites through a comprehensive analysis using various analytical techniques. The combination of X-ray diffraction (XRD) analysis, X-ray fluorescence (XRF) spectra analysis, impedance spectroscopy, and I-V analysis enables a detailed exploration of the structural, compositional, and electrical characteristics of the samples. Williamson-Hall plots in XRD analysis reveal crucial insights into grain and grain boundary impacts, revealing a shift in trends for doped samples indicative of tensile strain and underscores the influence of dopant ions on lattice distortion. XRF study confirms the elemental composition of the samples, validating the experimental approach. Impedance spectroscopy sheds light on conduction mechanisms and charge transfer processes, while the modulus study identifies distinct relaxation peaks corresponding to grain and grain boundary relaxation mechanisms. IV analysis demonstrates a significant reduction in leakage current with rare Earth element doping, suggesting promising applications.

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掺杂 Ho、Gd、La 对镍铁氧体晶粒边界特性和泄漏电流最小化的影响

本研究通过使用各种分析技术进行综合分析，探讨了掺杂 Ho、Gd 和 La 对溶胶凝胶衍生镍铁氧体的影响。结合 X 射线衍射 (XRD) 分析、X 射线荧光 (XRF) 光谱分析、阻抗光谱分析和 I-V 分析，可以详细探讨样品的结构、成分和电气特性。XRD 分析中的 Williamson-Hall 图揭示了对晶粒和晶界影响的重要见解，揭示了掺杂样品的趋势变化，表明了拉伸应变，并强调了掺杂离子对晶格畸变的影响。XRF 研究证实了样品的元素组成，验证了实验方法。阻抗光谱分析揭示了传导机制和电荷转移过程，而模量研究则确定了与晶粒和晶界弛豫机制相对应的不同弛豫峰。IV 分析表明，稀土元素掺杂可显著降低漏电流，表明其应用前景广阔。

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来源期刊

ECS Journal of Solid State Science and Technology MATERIALS SCIENCE, MULTIDISCIPLINARY-PHYSICS, APPLIED

CiteScore

4.50

自引率

13.60%

发文量

455

期刊介绍： The ECS Journal of Solid State Science and Technology (JSS) was launched in 2012, and publishes outstanding research covering fundamental and applied areas of solid state science and technology, including experimental and theoretical aspects of the chemistry and physics of materials and devices. JSS has five topical interest areas: carbon nanostructures and devices dielectric science and materials electronic materials and processing electronic and photonic devices and systems luminescence and display materials, devices and processing.