An improved pixel circuit with low noise event rate and enhanced bright‐light sensitivity for dynamic vision sensor

Abstract

Dynamic vision sensor (DVS) imaging quality is significantly affected by pixel noise and temporal contrast (TC), which is inversely proportional to sensitivity. To reduce the noise event rate and improve sensitivity in bright‐light conditions in the DVS pixel circuit, this paper proposes improvements to the conventional DVS pixel circuit. The proposed DVS pixel circuit adopts stacked medium‐threshold transistors instead of a single high‐threshold transistor in the photoreceptor and introduces a threshold switching circuit. Compared with the conventional DVS pixel circuit, this design increases event threshold normalized by root mean square (RMS) noise voltage, reducing the dim‐light noise bandwidth. Additionally, it achieves higher sensitivity in bright‐light conditions compared with dim‐light conditions. The proposed DVS pixel circuit is implemented in a 110‐nm complementary metal‐oxide semiconductor (CMOS) process. Post‐simulation results show that, for photocurrents between 5 fA and 100 pA, the proposed DVS pixel circuit achieves a 35 Hz peak event rate at 15% TC, which is reduced to 3.1% of the conventional structure. For photocurrents exceeding 30 pA, the proposed structure can switch TC from 15% to 5%, maintaining a noise event rate below 0.1 Hz.