S. Jasmee, Jose Palagud, Wang SW, K. I. Hoo, N. D. I. Masdzarif, T. S. Lim, G. Omar
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引用次数: 0
Abstract
Au-coated Ag Alloys (ACA) have emerged as a new bonding wire in semiconductor industries with lower costs for CMOS iBGA applications. However, a wide gap of study, especially in terms of free air ball (FAB) formation, ball shear, pull test and intermetallic compound (IMC) phase, has left these areas unclear. This paper extensively studied FAB and morphology behaviours for 4N Au (AA) and ACA wire bonds at different EFO currents and EFO times. The bondability performance, ball shear, and wire pull tests were also conducted at the optimum setting of the EFO process and various bonding parameters. The results showed that the EFO current of 45 mA and EFO time of 0.37 ms (#ACA5) provided the best FAB size and morphology formed as predicted by the JMP Prediction profiler with maximum shear force and pulled test up to 0.34 N and 0.20 N at S1 and S2 Force of 0.74 N and 0.15 N, respectively as well as S2 Power of 60 mA and 70 mA. The IMC formed is recognised as Ag–Al (Ag2Al) and not Au-Al phase since the Au layer coated onto the Ag alloys is 2.5 ± 0.05 to 5 ± 0.07 μm only. The Vickers hardness obtained is almost similar to AA wires that descended the ball. No obvious ripples formed, unlike AA wires, which signified that the ACA wires may reach a good bondability as conventional wires.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.