Nonlinear dynamics of a Josephson junction coupled to a diode and a negative conductance

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Computational Electronics Pub Date : 2024-07-30 DOI:10.1007/s10825-024-02200-6

M. A. Kakpo, C. H. Miwadinou

引用次数: 0

Abstract

We studied the nonlinear dynamics of a shunted inductive Josephson junction coupled to a diode and a negative conductance. Taking into account the non-harmonicity of the junction, based on Kirchhoff’s laws, we have developed the mathematical model which governs the dynamics of the circuit. The fixed points of the system are determined, and their stabilities are analyzed using the Routh–Hurwitz criterion. The bifurcation and transition to chaos of the model are studied using the the fourth-order Runge–Kutta method; the system displays a rich dynamics. The range of values of each parameter leading to periodic and chaotic electrical oscillations is obtained through the analysis of the effect of these parameters on each type of dynamics. Finally, the implementation by microcontroller is carried out in order to experimentally verify the different dynamics obtained numerically.

Abstract Image

查看原文本刊更多论文

与二极管和负电导耦合的约瑟夫森结的非线性动力学

我们研究了与二极管和负电导耦合的分流电感约瑟夫森结的非线性动力学。考虑到结的非谐波性，我们以基尔霍夫定律为基础，建立了支配电路动态的数学模型。我们确定了系统的固定点，并使用 Routh-Hurwitz 准则分析了它们的稳定性。使用四阶 Runge-Kutta 方法研究了模型的分岔和向混沌的过渡；系统显示出丰富的动态。通过分析各参数对各类动力学的影响，得出了导致周期性和混沌性电振荡的各参数的取值范围。最后，通过微控制器进行实施，以实验验证数值得出的不同动态。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.