Sonia Ben Slama, Faycel Saadallah, Tomas Fiorido, Mouna Grich, Fehri Krout, Marc Bendahan, Wissem Dimassi, Mongi Bouaicha
{"title":"Inverted Pyramidal Porous Silicon by Chemical Etching and PECVD Rebuilding for Selective Gas Sensing","authors":"Sonia Ben Slama, Faycel Saadallah, Tomas Fiorido, Mouna Grich, Fehri Krout, Marc Bendahan, Wissem Dimassi, Mongi Bouaicha","doi":"10.1007/s12633-024-03100-x","DOIUrl":null,"url":null,"abstract":"<div><p>Nanostructured silicon is a promising material for many recent applications. In this work, inverted pyramidal porous silicon is synthesized by two stages metal assisted etching followed by PECVD rebuilding. At first, nanowires are obtained by conventional Ag assisted chemical etching at the surface of monocrystalline silicon wafer. Then, Inverted pyramidal (IP) macroporous structure is obtained by dipping the sample in HNO<sub>3</sub>: Ni solution after nanowire harvesting. Finally, PECVD is used to build deep holes on the porous surface template. The depth of the pyramidal holes can be tuned by deposition time and silane pressure. The macroporous structure characteristics are investigated by many techniques such as XRD, SEM, FTIR, reflectivity and impedance. Sensing tests of IP layers for different gases show their selectivity for NO<sub>2</sub>.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 15","pages":"5637 - 5648"},"PeriodicalIF":2.8000,"publicationDate":"2024-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03100-x","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Nanostructured silicon is a promising material for many recent applications. In this work, inverted pyramidal porous silicon is synthesized by two stages metal assisted etching followed by PECVD rebuilding. At first, nanowires are obtained by conventional Ag assisted chemical etching at the surface of monocrystalline silicon wafer. Then, Inverted pyramidal (IP) macroporous structure is obtained by dipping the sample in HNO3: Ni solution after nanowire harvesting. Finally, PECVD is used to build deep holes on the porous surface template. The depth of the pyramidal holes can be tuned by deposition time and silane pressure. The macroporous structure characteristics are investigated by many techniques such as XRD, SEM, FTIR, reflectivity and impedance. Sensing tests of IP layers for different gases show their selectivity for NO2.
期刊介绍：
The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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